Electric-field control of exchange bias in multiferroic epitaxial heterostructures

The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing...

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Detalles Bibliográficos
Autores: Laukhin, Vladimir, Skumryev, Vassil Hristov, Martí, X., Hrabovsky, D., Sánchez Barrera, Florencio, García-Cuenca Varona, María Victoria, Ferrater Martorell, Cèsar, Varela Fernández, Manuel, 1956-, Lüders, R., Bobo, J. F., Fontcuberta i Griñó, Josep
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2006
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/13171
Acceso en línea:https://hdl.handle.net/2445/13171
Access Level:acceso abierto
Palabra clave:Electrònica quàntica
Semiconductors
Microelectrònica
Qunatum electronics
Microelectronics
Descripción
Sumario:The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices.

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