ZnO/PbS quantum dot photovoltaics for heterojunction and bulk nano-heterojunction architectures
[ANGLÈS] Recent work based on photovoltaic heterojunction devices consisting of n-type ZnO and p-type PbS is developed. We demonstrate that the PbS/metal electrode interface does not necessarily form a Shottky barrier which is confirmed by a device ideality factor of 1.85 ? consistent with a single...
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| Tipo de recurso: | tesis de maestría |
| Fecha de publicación: | 2012 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2099.1/16192 |
| Acceso en línea: | https://hdl.handle.net/2099.1/16192 |
| Access Level: | acceso abierto |
| Palabra clave: | Nanoparticles Solar cells Quantum dots Semiconductor nanocrystals quantum dot photovoltaics heterojunction ZnO PbS heterouniones fotovoltaicas nanocristalinos nanoestructures -- propietats òptiques Nanopartícules Cèl·lules solars Punts quàntics Nanocristalls semiconductors Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Telecomunicació òptica::Fotònica |
| Sumario: | [ANGLÈS] Recent work based on photovoltaic heterojunction devices consisting of n-type ZnO and p-type PbS is developed. We demonstrate that the PbS/metal electrode interface does not necessarily form a Shottky barrier which is confirmed by a device ideality factor of 1.85 ? consistent with a single diode model. We believe planar heterojunction architectures impose an efficiency limit based on the low contact area between interfacial layers and have thus developed recent work that introduced the bulk nano-heterojunction ? a facile method for mixing p and n type colloidal quantum dots together in solution. Devices are based on n-type ZnO and p-type PbS which exhibit open circuit voltages as high as 0.76 V. |
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