Development of a tabletop setup for the transient current technique using two-photon absorption in silicon particle detectors
The transient current technique (TCT) is widely used in the field of silicon particle detector development. So far, only laser wavelengths with a photon energy larger than or similar to the silicon bandgap (single photon absorption) were used. Recently, measurements using two-photon absorption (TPA)...
| Autores: | , , , , , , , , |
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| Tipo de documento: | artigo |
| Estado: | Versão publicada |
| Data de publicação: | 2021 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositório: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:dnet:digitalcsic_::fdb37e5ee1747e102bbb1c79268b119e |
| Acesso em linha: | http://hdl.handle.net/10261/260141 |
| Access Level: | Acceso aberto |
| Palavra-chave: | Femtosecond laser Radiation hardness Silicon detectors Transient current technique Two-photon absorption |
| Resumo: | The transient current technique (TCT) is widely used in the field of silicon particle detector development. So far, only laser wavelengths with a photon energy larger than or similar to the silicon bandgap (single photon absorption) were used. Recently, measurements using two-photon absorption (TPA) for silicon detector testing have been carried out for the first time. Excess carriers are only created at the focal point of the laser beam and thus resolution in all three spatial directions could be achieved. The resolution perpendicular to the incident laser beam could be increased roughly by a factor of 10. First measurements using this new method were performed at the Singular Laser Facility of Universidad del País Vasco (UPV)/Euskal Herriko Unibertzitatea (EHU). Following the initial success of the method, a compact TPA-TCT setup is under development. A first description of the setup and laser system is presented in this article. |
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