TCAD Simulation of two photon absorption—Transient current technique measurements on silicon detectors and LGADs
This article belongs to the Special Issue Radiation Sensors and Detectors: Materials, Principles and Applications (2nd Edition).
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2024 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/379922 |
| Acceso en línea: | http://hdl.handle.net/10261/379922 |
| Access Level: | acceso abierto |
| Palabra clave: | Solid state detectors Silicon detectors Device simulation Technology computer aided design Two photon absorption-transient current technique Transient current technique |
| Sumario: | This article belongs to the Special Issue Radiation Sensors and Detectors: Materials, Principles and Applications (2nd Edition). |
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