Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD

Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime...

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Autores: Fonrodona Turon, Marta, Soler Vilamitjana, David, Villar, Fernando, Escarré i Palou, Jordi, Asensi López, José Miguel, Bertomeu i Balagueró, Joan, Andreu i Batallé, Jordi
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2006
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/47300
Acceso en línea:https://hdl.handle.net/2445/47300
Access Level:acceso abierto
Palabra clave:Cèl·lules solars
Silici
Deposició química en fase vapor
Energia solar
Solar cells
Silicon
Chemical vapor deposition
Solar energy
id ES_c87b0a633d8caef0c48de92e2c8dc17a
oai_identifier_str oai:diposit.ub.edu:2445/47300
network_acronym_str ES
network_name_str España
repository_id_str
spelling Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVDFonrodona Turon, MartaSoler Vilamitjana, DavidVillar, FernandoEscarré i Palou, JordiAsensi López, José MiguelBertomeu i Balagueró, JoanAndreu i Batallé, JordiCèl·lules solarsSiliciDeposició química en fase vaporEnergia solarSolar cellsSiliconChemical vapor depositionSolar energyHot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated.Elsevier B.V.2006info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttps://hdl.handle.net/2445/47300Articles publicats en revistes (Física Aplicada)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésVersió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2005.07.146Thin Solid Films, 2006, vol. 501, num. 1-2, p. 247-251http://dx.doi.org/10.1016/j.tsf.2005.07.146(c) Elsevier B.V., 2006info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/473002026-05-27T06:46:51Z
dc.title.none.fl_str_mv Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD
title Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD
spellingShingle Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD
Fonrodona Turon, Marta
Cèl·lules solars
Silici
Deposició química en fase vapor
Energia solar
Solar cells
Silicon
Chemical vapor deposition
Solar energy
title_short Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD
title_full Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD
title_fullStr Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD
title_full_unstemmed Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD
title_sort Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD
dc.creator.none.fl_str_mv Fonrodona Turon, Marta
Soler Vilamitjana, David
Villar, Fernando
Escarré i Palou, Jordi
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
author Fonrodona Turon, Marta
author_facet Fonrodona Turon, Marta
Soler Vilamitjana, David
Villar, Fernando
Escarré i Palou, Jordi
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
author_role author
author2 Soler Vilamitjana, David
Villar, Fernando
Escarré i Palou, Jordi
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Cèl·lules solars
Silici
Deposició química en fase vapor
Energia solar
Solar cells
Silicon
Chemical vapor deposition
Solar energy
topic Cèl·lules solars
Silici
Deposició química en fase vapor
Energia solar
Solar cells
Silicon
Chemical vapor deposition
Solar energy
description Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated.
publishDate 2006
dc.date.none.fl_str_mv 2006
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/47300
url https://hdl.handle.net/2445/47300
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2005.07.146
Thin Solid Films, 2006, vol. 501, num. 1-2, p. 247-251
http://dx.doi.org/10.1016/j.tsf.2005.07.146
dc.rights.none.fl_str_mv (c) Elsevier B.V., 2006
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Elsevier B.V., 2006
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier B.V.
publisher.none.fl_str_mv Elsevier B.V.
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869419288996085760
score 15,300724

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