Influence of temperature on measurements of the two photon absorption – transient current technique in silicon planar detectors using a 1550 nm femtosecond fibre laser

The effect of temperature on the excess charge carrier generation and collection, injected using two photon absorption at a wavelength of 1550 nm, is investigated in a 285 Ωm thick, p-type silicon planar detector, with a bulk resistivity of 3.7 kΩ cm. Charge collection measurements are performed for...

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Detalles Bibliográficos
Autores: Pape, Sebastian, Currás, Esteban, Fernández-García, Marcos, Moll, Michael, Wiehe, Moritz
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2023
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/336131
Acceso en línea:http://hdl.handle.net/10261/336131
Access Level:acceso abierto
Palabra clave:Solid state detectors
Solid state detector characterisation
Two photon absorption-transient current technique
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spelling Influence of temperature on measurements of the two photon absorption – transient current technique in silicon planar detectors using a 1550 nm femtosecond fibre laserPape, SebastianCurrás, EstebanFernández-García, MarcosMoll, MichaelWiehe, MoritzSolid state detectorsSolid state detector characterisationTwo photon absorption-transient current techniqueThe effect of temperature on the excess charge carrier generation and collection, injected using two photon absorption at a wavelength of 1550 nm, is investigated in a 285 Ωm thick, p-type silicon planar detector, with a bulk resistivity of 3.7 kΩ cm. Charge collection measurements are performed for temperatures between −20 °C to 20 °C. The collected charge decreases by about 8% when the temperature is lowered from 20 °C to −20 °C, which is linked to a decreasing excess charge carrier generation. Further, a decreasing time over threshold is observed for decreasing temperatures, which is associated to an increasing charge carrier mobility.This project was performed within the framework of RD50 and has received funding from the European Union’s Horizon 2020 Research and Innovation programme under GA no 101004761 (AIDAinnova), the Wolfgang Gentner Program of the German Federal Ministry of Education and Research (grant no. 05E18CHA), and the CERN, Switzerland Knowledge Transfer Fund, through a grant awarded in 2017.Peer reviewedElsevierEuropean CommissionCERNFederal Ministry of Education and Research (Germany)Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202320232023info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10261/336131reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/EC/H2020/101004761The underlying dataset has been published as supplementary material of the article in the publisher platform at DOI 10.1016/j.nima.2023.168387https://doi.org/10.1016/j.nima.2023.168387Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3361312026-05-22T06:33:51Z
dc.title.none.fl_str_mv Influence of temperature on measurements of the two photon absorption – transient current technique in silicon planar detectors using a 1550 nm femtosecond fibre laser
title Influence of temperature on measurements of the two photon absorption – transient current technique in silicon planar detectors using a 1550 nm femtosecond fibre laser
spellingShingle Influence of temperature on measurements of the two photon absorption – transient current technique in silicon planar detectors using a 1550 nm femtosecond fibre laser
Pape, Sebastian
Solid state detectors
Solid state detector characterisation
Two photon absorption-transient current technique
title_short Influence of temperature on measurements of the two photon absorption – transient current technique in silicon planar detectors using a 1550 nm femtosecond fibre laser
title_full Influence of temperature on measurements of the two photon absorption – transient current technique in silicon planar detectors using a 1550 nm femtosecond fibre laser
title_fullStr Influence of temperature on measurements of the two photon absorption – transient current technique in silicon planar detectors using a 1550 nm femtosecond fibre laser
title_full_unstemmed Influence of temperature on measurements of the two photon absorption – transient current technique in silicon planar detectors using a 1550 nm femtosecond fibre laser
title_sort Influence of temperature on measurements of the two photon absorption – transient current technique in silicon planar detectors using a 1550 nm femtosecond fibre laser
dc.creator.none.fl_str_mv Pape, Sebastian
Currás, Esteban
Fernández-García, Marcos
Moll, Michael
Wiehe, Moritz
author Pape, Sebastian
author_facet Pape, Sebastian
Currás, Esteban
Fernández-García, Marcos
Moll, Michael
Wiehe, Moritz
author_role author
author2 Currás, Esteban
Fernández-García, Marcos
Moll, Michael
Wiehe, Moritz
author2_role author
author
author
author
dc.contributor.none.fl_str_mv European Commission
CERN
Federal Ministry of Education and Research (Germany)
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Solid state detectors
Solid state detector characterisation
Two photon absorption-transient current technique
topic Solid state detectors
Solid state detector characterisation
Two photon absorption-transient current technique
description The effect of temperature on the excess charge carrier generation and collection, injected using two photon absorption at a wavelength of 1550 nm, is investigated in a 285 Ωm thick, p-type silicon planar detector, with a bulk resistivity of 3.7 kΩ cm. Charge collection measurements are performed for temperatures between −20 °C to 20 °C. The collected charge decreases by about 8% when the temperature is lowered from 20 °C to −20 °C, which is linked to a decreasing excess charge carrier generation. Further, a decreasing time over threshold is observed for decreasing temperatures, which is associated to an increasing charge carrier mobility.
publishDate 2023
dc.date.none.fl_str_mv 2023
2023
2023
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/336131
url http://hdl.handle.net/10261/336131
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/EC/H2020/101004761
The underlying dataset has been published as supplementary material of the article in the publisher platform at DOI 10.1016/j.nima.2023.168387
https://doi.org/10.1016/j.nima.2023.168387
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,81155

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