Resonant tunneling diodes in semiconductor microcavities
We develop in this work a qualitative quantum electron transport model, in the strong light-matter coupling regime under dipole approximation, able to capture polaritonic signatures in the time-dependent electrical current. The effect of the quantized electromagnetic field in the displacement curren...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2022 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:292540 |
| Acceso en línea: | https://ddd.uab.cat/record/292540 https://dx.doi.org/urn:doi:10.1103/PhysRevB.106.205306 |
| Access Level: | acceso abierto |
| Palabra clave: | Quantum description of light-matter interaction Quantum transport Tunnel junctions Jaynes-Cummings model Landauer formula Terahertz techniques Tunnel diode resonance |
| Sumario: | We develop in this work a qualitative quantum electron transport model, in the strong light-matter coupling regime under dipole approximation, able to capture polaritonic signatures in the time-dependent electrical current. The effect of the quantized electromagnetic field in the displacement current of a resonant tunneling diode inside an optical cavity is analyzed. The original peaks of the bare electron transmission coefficient split into two new peaks due to the resonant electron-photon interaction, leading to coherent Rabi oscillations among the polaritonic states that are developed in the system in the strong coupling regime. This mimics known effects predicted by a Jaynes-Cummings model in closed systems and shows how a full quantum treatment of electrons and electromagnetic fields may open interesting paths for engineering new THz electron devices. The computational burden involved in the multi-time measurements of THz currents is tackled by invoking a Bohmian description of the light-matter interaction. We also show that the traditional static transmission coefficient used to characterize DC quantum electron devices has to be substituted by a new displacement current coefficient in high-frequency AC scenarios. |
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