Quantum Monte Carlo simulation of resonant tunneling diodes based on the Wigner distribution function formalism
A tool for the simulation of resonant tunneling diodes (RTDs) has been developed. This is based on the solution of the quantum Liouville equation in the active region of the device and the Boltzman transport equation in the regions adjacent to the contacts by means of a Monte Carlo algorithm. By acc...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1998 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:116286 |
| Acceso en línea: | https://ddd.uab.cat/record/116286 https://dx.doi.org/urn:doi:10.1063/1.122800 |
| Access Level: | acceso abierto |
| Palabra clave: | Quantum transport Resonant tunneling diodes Cumulative distribution functions Monte Carlo algorithms Quantum Monte Carlo methods |
| Sumario: | A tool for the simulation of resonant tunneling diodes (RTDs) has been developed. This is based on the solution of the quantum Liouville equation in the active region of the device and the Boltzman transport equation in the regions adjacent to the contacts by means of a Monte Carlo algorithm. By accurately coupling both approaches to current transport, we have developed a quantum simulation tool that allows the use of simulation domains much larger and realistic than those previously considered, without a significant increase in computational burden. The main characteristics expected for the considered devices are clearly obtained, thus supporting the validity of our tool for the simulation of RTDs. |
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