Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scattering

We report temperature-dependent photoluminescence on neutral and charged excitons in individual InAs quantum dots. We find narrow emission lines for temperatures up to 30 K for exciton transitions where only the electron ground state is occupied. In contrast, for doubly charged excitons where the ex...

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Autores: Urbaszek, B., McGhee, E. J., Krüger, M., Warburton, Richard J., Karrai, Khaled, Amand, T., Gerardot, B. D., Petroff, Pierre M., García Martínez, Jorge Manuel
Tipo de recurso: artículo
Fecha de publicación:2004
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/24305
Acceso en línea:http://hdl.handle.net/10261/24305
Access Level:acceso abierto
Palabra clave:Excitons
Semiconductor quantum dots
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spelling Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scatteringUrbaszek, B.McGhee, E. J.Krüger, M.Warburton, Richard J.Karrai, KhaledAmand, T.Gerardot, B. D.Petroff, Pierre M.García Martínez, Jorge ManuelExcitonsSemiconductor quantum dotsWe report temperature-dependent photoluminescence on neutral and charged excitons in individual InAs quantum dots. We find narrow emission lines for temperatures up to 30 K for exciton transitions where only the electron ground state is occupied. In contrast, for doubly charged excitons where the excited electron state is occupied, we observe a drastic increase of the ground state transition linewidth even at 30 K. We interpret this as evidence that the excited electron state is degenerate with the low energy tail of continuum states.This work was financially supported by EPSRC (UK) and DFG (Grant No. SFB348).Peer reviewedAmerican Physical Society201020102004info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501332514 bytesapplication/pdfhttp://hdl.handle.net/10261/24305reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://dx.doi.org/10.1103/PhysRevB.69.035304info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/243052026-05-22T06:33:51Z
dc.title.none.fl_str_mv Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scattering
title Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scattering
spellingShingle Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scattering
Urbaszek, B.
Excitons
Semiconductor quantum dots
title_short Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scattering
title_full Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scattering
title_fullStr Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scattering
title_full_unstemmed Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scattering
title_sort Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scattering
dc.creator.none.fl_str_mv Urbaszek, B.
McGhee, E. J.
Krüger, M.
Warburton, Richard J.
Karrai, Khaled
Amand, T.
Gerardot, B. D.
Petroff, Pierre M.
García Martínez, Jorge Manuel
author Urbaszek, B.
author_facet Urbaszek, B.
McGhee, E. J.
Krüger, M.
Warburton, Richard J.
Karrai, Khaled
Amand, T.
Gerardot, B. D.
Petroff, Pierre M.
García Martínez, Jorge Manuel
author_role author
author2 McGhee, E. J.
Krüger, M.
Warburton, Richard J.
Karrai, Khaled
Amand, T.
Gerardot, B. D.
Petroff, Pierre M.
García Martínez, Jorge Manuel
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Excitons
Semiconductor quantum dots
topic Excitons
Semiconductor quantum dots
description We report temperature-dependent photoluminescence on neutral and charged excitons in individual InAs quantum dots. We find narrow emission lines for temperatures up to 30 K for exciton transitions where only the electron ground state is occupied. In contrast, for doubly charged excitons where the excited electron state is occupied, we observe a drastic increase of the ground state transition linewidth even at 30 K. We interpret this as evidence that the excited electron state is degenerate with the low energy tail of continuum states.
publishDate 2004
dc.date.none.fl_str_mv 2004
2010
2010
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/24305
url http://hdl.handle.net/10261/24305
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://dx.doi.org/10.1103/PhysRevB.69.035304
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 332514 bytes
application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.811543

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