Wave-Function Topology Effects on Charged Excitons in Type-II InAs/GaAsSb Quantum Dots and Rings
InAs self-assembled quantum dots capped with GaAsSb exhibit type-II band alignment and singly or doubly connected hole wave¿function topology depending on the thickness of the capping layer or the Sb concentration. A configuration interaction analysis of the excitons complexes X0, X-1, and X+1 for d...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2019 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/207647 |
| Acceso en línea: | http://hdl.handle.net/10261/207647 |
| Access Level: | acceso abierto |
| Palabra clave: | Antimony Electronic structure Excitons Quantum dots Topology |
| Sumario: | InAs self-assembled quantum dots capped with GaAsSb exhibit type-II band alignment and singly or doubly connected hole wave¿function topology depending on the thickness of the capping layer or the Sb concentration. A configuration interaction analysis of the excitons complexes X0, X-1, and X+1 for different overlayer thicknesses is presented. A characteristic double line structure of the X+1 recombination is predicted for the doubly connected topology. A hallmark is established to identify the optical Aharonov¿Bohm transition in addition to the well-known intensity fade-out of the X0. |
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