Study of thermal treated a-Si implanted with Er and O ions
Visible luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O and subsequently annealed in nitrogen has been investigated by cathodoluminescence (CL) in a scanning electron microscope. Co-implanted samples show a more intense luminescence, which is revealed...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2002 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/58919 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/58919 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Erbium Luminescence Amorphous-Silicon Crystal Silicon Porous Silicon Excitation Cathodoluminescence Photoluminescence Films Segregation Epitaxy Física de materiales |
| Sumario: | Visible luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O and subsequently annealed in nitrogen has been investigated by cathodoluminescence (CL) in a scanning electron microscope. Co-implanted samples show a more intense luminescence, which is revealed by annealing at lower temperatures than the samples implanted only with erbium. Thermal treatments cause the formation of erbium oxide as well as Er-Si complexes or precipitates. Violet-blue luminescence has been found from CL images and spectra to be related to Er-Si precipitates. Emission in the green-red range is attributed to oxide species. |
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