Readout electronics for LGAD sensors
In this paper, an ASIC fabricated in 180 nm CMOS technology from AMS with the very front-end electronics used to readout LGAD sensors is presented as well as its experimental results. The front-end has the typical architecture for Si-strip readout, i.e., preamplification stage with a Charge Sensitiv...
| Autores: | , , , , , , , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2017 |
| País: | España |
| Institución: | Universidad de Barcelona |
| Repositorio: | Dipòsit Digital de la UB |
| OAI Identifier: | oai:diposit.ub.edu:2445/136698 |
| Acceso en línea: | https://hdl.handle.net/2445/136698 |
| Access Level: | acceso abierto |
| Palabra clave: | Circuits electrònics Electronic circuits |
| id |
ES_c24ed3c7ac20dfbaa252dbf6f5fb4fc6 |
|---|---|
| oai_identifier_str |
oai:diposit.ub.edu:2445/136698 |
| network_acronym_str |
ES |
| network_name_str |
España |
| repository_id_str |
|
| spelling |
Readout electronics for LGAD sensorsAlonso Casanovas, OscarFranch Masdeu, NilCanals Gil, JoanPalacio Bonet, FranciscoLópez de Miguel, ManuelVilà i Arbonès, Anna MariaDiéguez Barrientos, ÀngelCarulla, Montserrat, 1930-Flores, D.Hidalgo, S.Merlos, A.Pellegrini, G.Quirion, D.Circuits electrònicsElectronic circuitsIn this paper, an ASIC fabricated in 180 nm CMOS technology from AMS with the very front-end electronics used to readout LGAD sensors is presented as well as its experimental results. The front-end has the typical architecture for Si-strip readout, i.e., preamplification stage with a Charge Sensitive Amplifier (CSA) followed by a CR-RC shaper. Both amplifiers are based on a folded cascode structure with a PMOS input transistor and the shaper only uses passive elements for the feedback stage. The CSA has programmable gain and a configurable input stage in order to adapt to the different input capacitance of the LGAD sensors (pixelated, short and long strips) and to the different input signal (depending on the gain of the LGAD). The fabricated prototype has an area of 0.865 mm × 0.965 mm and includes the biasing circuit for the CSA and the shaper, 4 analog channels (CSA+shaper) and programmable charge injection circuits included for testing purposes. Noise and power analysis performed during simulation fixed the size of the input transistor to W/L = 860 μm/0.2 μm. The shaping time is fixed by design at 1 us and, in this ASIC version, the feedback elements of the shaper are passive, which means that the area of the shaper can be reduced using active elements in future versions. Finally, the different gains of the CSA have been selected to maintain an ENC below 400 electrons for a detector capacitor of 20 pF, with a power consumption of 150 μ W per channel.Institute of Physics (IOP)2017info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/2445/136698Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésReproducció del document publicat a: https://doi.org/10.1088/1748-0221/12/02/C02069Journal of Instrumentation, 2017, vol. 12https://doi.org/10.1088/1748-0221/12/02/C02069info:eu-repo/grantAgreement/EC/H2020/737089cc-by (c) Alonso Casanovas, Oscar et al., 2017http://creativecommons.org/licenses/by/3.0/esinfo:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/1366982026-05-27T06:46:51Z |
| dc.title.none.fl_str_mv |
Readout electronics for LGAD sensors |
| title |
Readout electronics for LGAD sensors |
| spellingShingle |
Readout electronics for LGAD sensors Alonso Casanovas, Oscar Circuits electrònics Electronic circuits |
| title_short |
Readout electronics for LGAD sensors |
| title_full |
Readout electronics for LGAD sensors |
| title_fullStr |
Readout electronics for LGAD sensors |
| title_full_unstemmed |
Readout electronics for LGAD sensors |
| title_sort |
Readout electronics for LGAD sensors |
| dc.creator.none.fl_str_mv |
Alonso Casanovas, Oscar Franch Masdeu, Nil Canals Gil, Joan Palacio Bonet, Francisco López de Miguel, Manuel Vilà i Arbonès, Anna Maria Diéguez Barrientos, Àngel Carulla, Montserrat, 1930- Flores, D. Hidalgo, S. Merlos, A. Pellegrini, G. Quirion, D. |
| author |
Alonso Casanovas, Oscar |
| author_facet |
Alonso Casanovas, Oscar Franch Masdeu, Nil Canals Gil, Joan Palacio Bonet, Francisco López de Miguel, Manuel Vilà i Arbonès, Anna Maria Diéguez Barrientos, Àngel Carulla, Montserrat, 1930- Flores, D. Hidalgo, S. Merlos, A. Pellegrini, G. Quirion, D. |
| author_role |
author |
| author2 |
Franch Masdeu, Nil Canals Gil, Joan Palacio Bonet, Francisco López de Miguel, Manuel Vilà i Arbonès, Anna Maria Diéguez Barrientos, Àngel Carulla, Montserrat, 1930- Flores, D. Hidalgo, S. Merlos, A. Pellegrini, G. Quirion, D. |
| author2_role |
author author author author author author author author author author author author |
| dc.subject.none.fl_str_mv |
Circuits electrònics Electronic circuits |
| topic |
Circuits electrònics Electronic circuits |
| description |
In this paper, an ASIC fabricated in 180 nm CMOS technology from AMS with the very front-end electronics used to readout LGAD sensors is presented as well as its experimental results. The front-end has the typical architecture for Si-strip readout, i.e., preamplification stage with a Charge Sensitive Amplifier (CSA) followed by a CR-RC shaper. Both amplifiers are based on a folded cascode structure with a PMOS input transistor and the shaper only uses passive elements for the feedback stage. The CSA has programmable gain and a configurable input stage in order to adapt to the different input capacitance of the LGAD sensors (pixelated, short and long strips) and to the different input signal (depending on the gain of the LGAD). The fabricated prototype has an area of 0.865 mm × 0.965 mm and includes the biasing circuit for the CSA and the shaper, 4 analog channels (CSA+shaper) and programmable charge injection circuits included for testing purposes. Noise and power analysis performed during simulation fixed the size of the input transistor to W/L = 860 μm/0.2 μm. The shaping time is fixed by design at 1 us and, in this ASIC version, the feedback elements of the shaper are passive, which means that the area of the shaper can be reduced using active elements in future versions. Finally, the different gains of the CSA have been selected to maintain an ENC below 400 electrons for a detector capacitor of 20 pF, with a power consumption of 150 μ W per channel. |
| publishDate |
2017 |
| dc.date.none.fl_str_mv |
2017 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/2445/136698 |
| url |
https://hdl.handle.net/2445/136698 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
Reproducció del document publicat a: https://doi.org/10.1088/1748-0221/12/02/C02069 Journal of Instrumentation, 2017, vol. 12 https://doi.org/10.1088/1748-0221/12/02/C02069 info:eu-repo/grantAgreement/EC/H2020/737089 |
| dc.rights.none.fl_str_mv |
cc-by (c) Alonso Casanovas, Oscar et al., 2017 http://creativecommons.org/licenses/by/3.0/es info:eu-repo/semantics/openAccess |
| rights_invalid_str_mv |
cc-by (c) Alonso Casanovas, Oscar et al., 2017 http://creativecommons.org/licenses/by/3.0/es |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
application/pdf |
| dc.publisher.none.fl_str_mv |
Institute of Physics (IOP) |
| publisher.none.fl_str_mv |
Institute of Physics (IOP) |
| dc.source.none.fl_str_mv |
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) reponame:Dipòsit Digital de la UB instname:Universidad de Barcelona |
| instname_str |
Universidad de Barcelona |
| reponame_str |
Dipòsit Digital de la UB |
| collection |
Dipòsit Digital de la UB |
| repository.name.fl_str_mv |
|
| repository.mail.fl_str_mv |
|
| _version_ |
1869418654765940736 |
| score |
15.300719 |