Implementation and evaluation of the Level Set method: towards efficient and accurate simulation of wet etching for microengineering applications

The use of atomistic methods, such as the Continuous Cellular Automaton (CCA), is currently regarded as a computationally efficient and experimentally accurate approach for the simulation of anisotropic etching of various substrates in the manufacture of Micro-electro-mechanical Systems (MEMS). Howe...

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Autores: Montoliu Álvaro, Carles, Ferrando Jódar, Néstor, Gosalvez, Miguel Ángel, Cerdá Boluda, Joaquín|||0000-0002-6649-298X, Colom Palero, Ricardo José|||0000-0003-0704-4906
Formato: artículo
Fecha de publicación:2013
País:España
Recursos:Universitat Politècnica de València (UPV)
Repositorio:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
Idioma:inglés
OAI Identifier:oai:riunet.upv.es:10251/53148
Acesso em linha:https://riunet.upv.es/handle/10251/53148
Access Level:acceso abierto
Palavra-chave:Level Set method
Sparse Field Method
Anisotropic wet chemical etching
Microengineering
Cellular Automata
MEMS
Parallel computing
GPU
TECNOLOGIA ELECTRONICA
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spelling Implementation and evaluation of the Level Set method: towards efficient and accurate simulation of wet etching for microengineering applicationsMontoliu Álvaro, CarlesFerrando Jódar, NéstorGosalvez, Miguel ÁngelCerdá Boluda, Joaquín|||0000-0002-6649-298XColom Palero, Ricardo José|||0000-0003-0704-4906Level Set methodSparse Field MethodAnisotropic wet chemical etchingMicroengineeringCellular AutomataMEMSParallel computingGPUTECNOLOGIA ELECTRONICAThe use of atomistic methods, such as the Continuous Cellular Automaton (CCA), is currently regarded as a computationally efficient and experimentally accurate approach for the simulation of anisotropic etching of various substrates in the manufacture of Micro-electro-mechanical Systems (MEMS). However, when the features of the chemical process are modified, a time-consuming calibration process needs to be used to transform the new macroscopic etch rates into a corresponding set of atomistic rates. Furthermore, changing the substrate requires a labor-intensive effort to reclassify most atomistic neighborhoods. In this context, the Level Set (LS) method provides an alternative approach where the macroscopic forces affecting the front evolution are directly applied at the discrete level, thus avoiding the need for reclassification and/or calibration. Correspondingly, we present a fully-operational Sparse Field Method (SFM) implementation of the LS approach, discussing in detail the algorithm and providing a thorough characterization of the computational cost and simulation accuracy, including a comparison to the performance by the most recent CCA model. We conclude that the SFM implementation achieves similar accuracy as the CCA method with less fluctuations in the etch front and requiring roughly 4 times less memory. Although SFM can be up to 2 times slower than CCA for the simulation of anisotropic etchants, it can also be up to 10 times faster than CCA for isotropic etchants. In addition, we present a parallel, GPU-based implementation (gSFM) and compare it to an optimized, multicore CPU version (cSFM), demonstrating that the SFM algorithm can be successfully parallelized and the simulation times consequently reduced, while keeping the accuracy of the simulations. Although modern multicore CPUs provide an acceptable option, the massively parallel architecture of modern GPUs is more suitable, as reflected by computational times for gSFM up to 7.4 times faster than for cSFM. (c) 2013 Elsevier B.V. All rights reserved.We thank the anonymous reviewers for their valuable comments and suggestions. This work has been supported by the Spanish FPI-MICINN BES-2011-045940 grant and the Ramon y Cajal Fellowship Program by the Spanish Ministry of Science and Innovation. Also, we acknowledge support by the JAE-Doc grant from the Junta para la Ampliacion de Estudios program co-funded by FSE and the Professor Partnership Program by NVIDIA Corporation.ElsevierDepartamento de Ingeniería ElectrónicaEscuela Técnica Superior de Ingeniería de TelecomunicaciónInstituto de Instrumentación para Imagen MolecularMinisterio de Ciencia e InnovaciónEuropean Social FundConsejo Superior de Investigaciones CientíficasNVIDIARepositorio Institucional de la Universitat Politècnica de València Riunet20132013-10-01journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfapplication/pdfhttps://riunet.upv.es/handle/10251/53148reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valénciainstname:Universitat Politècnica de València (UPV)InglésengMinisterio de Ciencia e Innovación http://dx.doi.org/10.13039/501100004837 BES-2011-045940 BES-2011-045940open accesshttp://purl.org/coar/access_right/c_abf2Reserva de todos los derechoshttp://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:riunet.upv.es:10251/531482026-06-13T07:49:27Z
dc.title.none.fl_str_mv Implementation and evaluation of the Level Set method: towards efficient and accurate simulation of wet etching for microengineering applications
title Implementation and evaluation of the Level Set method: towards efficient and accurate simulation of wet etching for microengineering applications
spellingShingle Implementation and evaluation of the Level Set method: towards efficient and accurate simulation of wet etching for microengineering applications
Montoliu Álvaro, Carles
Level Set method
Sparse Field Method
Anisotropic wet chemical etching
Microengineering
Cellular Automata
MEMS
Parallel computing
GPU
TECNOLOGIA ELECTRONICA
title_short Implementation and evaluation of the Level Set method: towards efficient and accurate simulation of wet etching for microengineering applications
title_full Implementation and evaluation of the Level Set method: towards efficient and accurate simulation of wet etching for microengineering applications
title_fullStr Implementation and evaluation of the Level Set method: towards efficient and accurate simulation of wet etching for microengineering applications
title_full_unstemmed Implementation and evaluation of the Level Set method: towards efficient and accurate simulation of wet etching for microengineering applications
title_sort Implementation and evaluation of the Level Set method: towards efficient and accurate simulation of wet etching for microengineering applications
dc.creator.none.fl_str_mv Montoliu Álvaro, Carles
Ferrando Jódar, Néstor
Gosalvez, Miguel Ángel
Cerdá Boluda, Joaquín|||0000-0002-6649-298X
Colom Palero, Ricardo José|||0000-0003-0704-4906
author Montoliu Álvaro, Carles
author_facet Montoliu Álvaro, Carles
Ferrando Jódar, Néstor
Gosalvez, Miguel Ángel
Cerdá Boluda, Joaquín|||0000-0002-6649-298X
Colom Palero, Ricardo José|||0000-0003-0704-4906
author_role author
author2 Ferrando Jódar, Néstor
Gosalvez, Miguel Ángel
Cerdá Boluda, Joaquín|||0000-0002-6649-298X
Colom Palero, Ricardo José|||0000-0003-0704-4906
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Departamento de Ingeniería Electrónica
Escuela Técnica Superior de Ingeniería de Telecomunicación
Instituto de Instrumentación para Imagen Molecular
Ministerio de Ciencia e Innovación
European Social Fund
Consejo Superior de Investigaciones Científicas
NVIDIA
Repositorio Institucional de la Universitat Politècnica de València Riunet
dc.subject.none.fl_str_mv Level Set method
Sparse Field Method
Anisotropic wet chemical etching
Microengineering
Cellular Automata
MEMS
Parallel computing
GPU
TECNOLOGIA ELECTRONICA
topic Level Set method
Sparse Field Method
Anisotropic wet chemical etching
Microengineering
Cellular Automata
MEMS
Parallel computing
GPU
TECNOLOGIA ELECTRONICA
description The use of atomistic methods, such as the Continuous Cellular Automaton (CCA), is currently regarded as a computationally efficient and experimentally accurate approach for the simulation of anisotropic etching of various substrates in the manufacture of Micro-electro-mechanical Systems (MEMS). However, when the features of the chemical process are modified, a time-consuming calibration process needs to be used to transform the new macroscopic etch rates into a corresponding set of atomistic rates. Furthermore, changing the substrate requires a labor-intensive effort to reclassify most atomistic neighborhoods. In this context, the Level Set (LS) method provides an alternative approach where the macroscopic forces affecting the front evolution are directly applied at the discrete level, thus avoiding the need for reclassification and/or calibration. Correspondingly, we present a fully-operational Sparse Field Method (SFM) implementation of the LS approach, discussing in detail the algorithm and providing a thorough characterization of the computational cost and simulation accuracy, including a comparison to the performance by the most recent CCA model. We conclude that the SFM implementation achieves similar accuracy as the CCA method with less fluctuations in the etch front and requiring roughly 4 times less memory. Although SFM can be up to 2 times slower than CCA for the simulation of anisotropic etchants, it can also be up to 10 times faster than CCA for isotropic etchants. In addition, we present a parallel, GPU-based implementation (gSFM) and compare it to an optimized, multicore CPU version (cSFM), demonstrating that the SFM algorithm can be successfully parallelized and the simulation times consequently reduced, while keeping the accuracy of the simulations. Although modern multicore CPUs provide an acceptable option, the massively parallel architecture of modern GPUs is more suitable, as reflected by computational times for gSFM up to 7.4 times faster than for cSFM. (c) 2013 Elsevier B.V. All rights reserved.
publishDate 2013
dc.date.none.fl_str_mv 2013
2013-10-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://riunet.upv.es/handle/10251/53148
url https://riunet.upv.es/handle/10251/53148
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Ministerio de Ciencia e Innovación http://dx.doi.org/10.13039/501100004837 BES-2011-045940 BES-2011-045940
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reserva de todos los derechos
http://rightsstatements.org/vocab/InC/1.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reserva de todos los derechos
http://rightsstatements.org/vocab/InC/1.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname:Universitat Politècnica de València (UPV)
instname_str Universitat Politècnica de València (UPV)
reponame_str RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
collection RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300724

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