Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping

We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of germanium at concentrations above 10 exp 20 cm exp(–3) shifts the photoluminescence emissi...

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Detalles Bibliográficos
Autores: Hille, P., Müßener, J., Becker, P., De La Mata, M., Rosemann, N., Magén, C., Arbiol, J., Teubert, J., Chatterjee, S., Schörmann, J., Eickhoff, M.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2014
País:España
Institución:Universidad de Zaragoza
Repositorio:Zaguán. Repositorio Digital de la Universidad de Zaragoza
OAI Identifier:oai:zaguan.unizar.es:44949
Acceso en línea:http://zaguan.unizar.es/record/44949
Access Level:acceso abierto
Descripción
Sumario:We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of germanium at concentrations above 10 exp 20 cm exp(–3) shifts the photoluminescence emission energy of GaN nanodiscs to higher energies accompanied by a decrease of the photoluminescence decay time. At the same time, the thickness-dependent shift in emission energy is significantly reduced. In spite of the high donor concentration, a degradation of the photoluminescence properties is not observed.

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