Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping

We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of germanium at concentrations above 10 exp 20 cm exp(–3) shifts the photoluminescence emissi...

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Bibliographic Details
Authors: Hille, P., Müßener, J., Becker, P., De La Mata, M., Rosemann, N., Magén, C., Arbiol, J., Teubert, J., Chatterjee, S., Schörmann, J., Eickhoff, M.
Format: article
Status:Published version
Publication Date:2014
Country:España
Institution:Universidad de Zaragoza
Repository:Zaguán. Repositorio Digital de la Universidad de Zaragoza
OAI Identifier:oai:zaguan.unizar.es:44949
Online Access:http://zaguan.unizar.es/record/44949
Access Level:Open access
Description
Summary:We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of germanium at concentrations above 10 exp 20 cm exp(–3) shifts the photoluminescence emission energy of GaN nanodiscs to higher energies accompanied by a decrease of the photoluminescence decay time. At the same time, the thickness-dependent shift in emission energy is significantly reduced. In spite of the high donor concentration, a degradation of the photoluminescence properties is not observed.

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