Transition metal oxides as hole-selective contacts in silicon heterojunctions solar cells
This work reports on a comparative study comprising three transition metal oxides, MoO3, WO3 and V2O5, acting as front p-type contacts for n-type crystalline silicon heterojunction solar cells. Owing to their high work functions (>5 eV) and wide energy band gaps, these oxides act as transparent h...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2016 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/90412 |
| Acceso en línea: | https://hdl.handle.net/2117/90412 https://dx.doi.org/10.1016/j.solmat.2015.08.028 |
| Access Level: | acceso abierto |
| Palabra clave: | Solar cells Silicon heterojunction Transition metal oxide Carrier selective contact Cèl·lules solars Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars |
| Sumario: | This work reports on a comparative study comprising three transition metal oxides, MoO3, WO3 and V2O5, acting as front p-type contacts for n-type crystalline silicon heterojunction solar cells. Owing to their high work functions (>5 eV) and wide energy band gaps, these oxides act as transparent hole-selective contacts with semiconductive properties that are determined by oxygen-vacancy defects (MoO3-x), as confirmed by X-ray photoelectron spectroscopy. In the fabricated hybrid structures, 15 nm thick transition metal oxide layers were deposited by vacuum thermal evaporation. Of all three devices, the V2O5/n-silicon heterojunction performed the best with a conversion efficiency of 15.7% and an open-circuit voltage of 606 mV, followed by MoO3 (13.6%) and WO3 (12.5%). These results bring into view a new silicon heterojunction solar cell concept with advantages such as the absence of toxic dopant gases and a simplified low-temperature fabrication process. |
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