TFET-Based power management circuit for RF energy harvesting
This paper proposes a Tunnel FET (TFET)-based power management circuit (PMC) for ultra-low power RF energy harvesting applications. In contrast with conventional thermionic devices, the band-to-band tunneling mechanism of TFETs allows a better switching performance at sub-0.2 V operation. As a resul...
| Autores: | , , |
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| Formato: | artículo |
| Fecha de publicación: | 2016 |
| País: | España |
| Recursos: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/105661 |
| Acesso em linha: | https://hdl.handle.net/2117/105661 https://dx.doi.org/10.1109/JEDS.2016.2619908 |
| Access Level: | acceso abierto |
| Palavra-chave: | Energy harvesting power management radio-frequency tunnel FET UHF ultra-low power Enginyeria elèctrica Energia Energia -- Captació Àrees temàtiques de la UPC::Enginyeria elèctrica |
| Resumo: | This paper proposes a Tunnel FET (TFET)-based power management circuit (PMC) for ultra-low power RF energy harvesting applications. In contrast with conventional thermionic devices, the band-to-band tunneling mechanism of TFETs allows a better switching performance at sub-0.2 V operation. As a result, improved efficiencies in RF-powered circuits are achieved, thanks to increased rectification performance at low power levels and to the reduced energy required for a proper PMC operation. It is shown by simulations that heterojunction TFET devices designed with III-V materials can improve the rectification process at received power levels below -20 dBm (915 MHz) when compared to the application of homojunction III-V TFETs and Si FinFETs. For an available power of -25 dBm, the proposed converter is able to deliver 1.1 µW of average power (with 0.5 V) to the output load with a boost efficiency of 86%. |
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