Electronic band structure of three-dimensional topological insulators with different stoichiometry composition

We report on a comparative theoretical and experimental investigation of the electronic band structure of a family of three-dimensional topological insulators, AIVBi4Te7−xSex (AIV= Sn, Pb;x = 0, 1). We prove by means of density functional theory calculations and angle-resolved photoemission spectros...

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Autores: Grimaldi, I., Pacilè, Daniela, Eremeev, Sergey V., De Luca, Oreste, Policicchio, A., Moras, Paolo, Sheverdyaeva, P. M., Kundu, A. K., Aliev, Ziya S., Rudolf, P., Agostino, Raffaele G., Chulkov, Eugene V., Papagno, Marco
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2020
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/226355
Acceso en línea:http://hdl.handle.net/10261/226355
Access Level:acceso abierto
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spelling Electronic band structure of three-dimensional topological insulators with different stoichiometry compositionGrimaldi, I.Pacilè, DanielaEremeev, Sergey V.De Luca, OrestePolicicchio, A.Moras, PaoloSheverdyaeva, P. M.Kundu, A. K.Aliev, Ziya S.Rudolf, P.Agostino, Raffaele G.Chulkov, Eugene V.Papagno, MarcoWe report on a comparative theoretical and experimental investigation of the electronic band structure of a family of three-dimensional topological insulators, AIVBi4Te7−xSex (AIV= Sn, Pb;x = 0, 1). We prove by means of density functional theory calculations and angle-resolved photoemission spectroscopy measurements that partial or total substitution of heavy atoms by lighter isoelectronic ones affects the electronic properties of topological insulators. In particular, we show that the modification of the Dirac cone position relative to the Fermi level and the bulk band gap size can be controlled by varying the stoichiometry of the compound. We also demonstrate that the investigated systems are inert to oxygen exposure.The authors acknowledge financial support from the Saint Petersburg State University (Grant No. 40990069), the Tomsk State University competitiveness improvement program (Grant No. 8.1.01.2018), the Fundamental Research Program of the State Academies of Sciences (line of research III.23.2.9), and the project EUROFEL-ROADMAP ESFRI. This work was also partly supported by the Italian Ministry of Education, Universities and Research (MIUR) through project PON03PE_00092_1 (EOMAT) and by the Science Development Foundation under the President of the Republic of Azerbaijan (Grant No. EIF/MQM/Elm-Tehsil-1-2016- 1(26)-71/01/4-M-33). S.V.E. acknowledges support from the Russian Science Foundation (Grant No. 18-12-00169) for part of the electronic band structure calculations.Peer reviewedAmerican Physical SocietySaint Petersburg State UniversityTomsk State UniversityNational Academies of Sciences, Engineering and Medicine (US)Ministero dell'Istruzione, dell'Università e della RicercaScience Development Foundation under the President of the Republic of AzerbaijanRussian Science FoundationConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202120212020info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/226355reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttps://doi.org/10.1103/PhysRevB.102.085118Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/2263552026-05-22T06:33:51Z
dc.title.none.fl_str_mv Electronic band structure of three-dimensional topological insulators with different stoichiometry composition
title Electronic band structure of three-dimensional topological insulators with different stoichiometry composition
spellingShingle Electronic band structure of three-dimensional topological insulators with different stoichiometry composition
Grimaldi, I.
title_short Electronic band structure of three-dimensional topological insulators with different stoichiometry composition
title_full Electronic band structure of three-dimensional topological insulators with different stoichiometry composition
title_fullStr Electronic band structure of three-dimensional topological insulators with different stoichiometry composition
title_full_unstemmed Electronic band structure of three-dimensional topological insulators with different stoichiometry composition
title_sort Electronic band structure of three-dimensional topological insulators with different stoichiometry composition
dc.creator.none.fl_str_mv Grimaldi, I.
Pacilè, Daniela
Eremeev, Sergey V.
De Luca, Oreste
Policicchio, A.
Moras, Paolo
Sheverdyaeva, P. M.
Kundu, A. K.
Aliev, Ziya S.
Rudolf, P.
Agostino, Raffaele G.
Chulkov, Eugene V.
Papagno, Marco
author Grimaldi, I.
author_facet Grimaldi, I.
Pacilè, Daniela
Eremeev, Sergey V.
De Luca, Oreste
Policicchio, A.
Moras, Paolo
Sheverdyaeva, P. M.
Kundu, A. K.
Aliev, Ziya S.
Rudolf, P.
Agostino, Raffaele G.
Chulkov, Eugene V.
Papagno, Marco
author_role author
author2 Pacilè, Daniela
Eremeev, Sergey V.
De Luca, Oreste
Policicchio, A.
Moras, Paolo
Sheverdyaeva, P. M.
Kundu, A. K.
Aliev, Ziya S.
Rudolf, P.
Agostino, Raffaele G.
Chulkov, Eugene V.
Papagno, Marco
author2_role author
author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Saint Petersburg State University
Tomsk State University
National Academies of Sciences, Engineering and Medicine (US)
Ministero dell'Istruzione, dell'Università e della Ricerca
Science Development Foundation under the President of the Republic of Azerbaijan
Russian Science Foundation
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
description We report on a comparative theoretical and experimental investigation of the electronic band structure of a family of three-dimensional topological insulators, AIVBi4Te7−xSex (AIV= Sn, Pb;x = 0, 1). We prove by means of density functional theory calculations and angle-resolved photoemission spectroscopy measurements that partial or total substitution of heavy atoms by lighter isoelectronic ones affects the electronic properties of topological insulators. In particular, we show that the modification of the Dirac cone position relative to the Fermi level and the bulk band gap size can be controlled by varying the stoichiometry of the compound. We also demonstrate that the investigated systems are inert to oxygen exposure.
publishDate 2020
dc.date.none.fl_str_mv 2020
2021
2021
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/226355
url http://hdl.handle.net/10261/226355
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv https://doi.org/10.1103/PhysRevB.102.085118
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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