Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films

Plasma-induced molecular beam epitaxial AlInGaN heterostructures have been characterized by spatial resolved cathodoluminescence and x-ray energy dispersive microanalysis. Competitive incorporation of Al and In has been observed, with the formation of In-rich regions, showing enhanced luminescence a...

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Detalles Bibliográficos
Autores: Cremades Rodríguez, Ana Isabel, Narayanan, V.C., Piqueras De Noriega, Francisco Javier, Lima, A.P., Ambacher, O., Stutzmann, M.
Tipo de recurso: artículo
Fecha de publicación:2001
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/58811
Acceso en línea:https://hdl.handle.net/20.500.14352/58811
Access Level:acceso abierto
Palabra clave:538.9
Alloys
Física de materiales
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spelling Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN filmsCremades Rodríguez, Ana IsabelNarayanan, V.C.Piqueras De Noriega, Francisco JavierLima, A.P.Ambacher, O.Stutzmann, M.538.9AlloysFísica de materialesPlasma-induced molecular beam epitaxial AlInGaN heterostructures have been characterized by spatial resolved cathodoluminescence and x-ray energy dispersive microanalysis. Competitive incorporation of Al and In has been observed, with the formation of In-rich regions, showing enhanced luminescence around surface pinholes. These island-like In-rich regions are favored by growth at lower temperature due to the higher incorporation of indium into the alloy. The elastic strain relaxation associated to pinhole formation induces preferential local indium incorporation. The diffusion of carriers to these areas with reduced band gap enhances the luminescence emission of the quaternary film. The width and intensity of the luminescence appear to be sensitive to the mismatch between the quaternary film and the GaN layer below.American Institute of PhysicsUniversidad Complutense de Madrid20012001-11-0120012001-11-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/58811reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/588112026-06-02T12:44:21Z
dc.title.none.fl_str_mv Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films
title Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films
spellingShingle Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films
Cremades Rodríguez, Ana Isabel
538.9
Alloys
Física de materiales
title_short Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films
title_full Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films
title_fullStr Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films
title_full_unstemmed Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films
title_sort Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films
dc.creator.none.fl_str_mv Cremades Rodríguez, Ana Isabel
Narayanan, V.C.
Piqueras De Noriega, Francisco Javier
Lima, A.P.
Ambacher, O.
Stutzmann, M.
author Cremades Rodríguez, Ana Isabel
author_facet Cremades Rodríguez, Ana Isabel
Narayanan, V.C.
Piqueras De Noriega, Francisco Javier
Lima, A.P.
Ambacher, O.
Stutzmann, M.
author_role author
author2 Narayanan, V.C.
Piqueras De Noriega, Francisco Javier
Lima, A.P.
Ambacher, O.
Stutzmann, M.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Alloys
Física de materiales
topic 538.9
Alloys
Física de materiales
description Plasma-induced molecular beam epitaxial AlInGaN heterostructures have been characterized by spatial resolved cathodoluminescence and x-ray energy dispersive microanalysis. Competitive incorporation of Al and In has been observed, with the formation of In-rich regions, showing enhanced luminescence around surface pinholes. These island-like In-rich regions are favored by growth at lower temperature due to the higher incorporation of indium into the alloy. The elastic strain relaxation associated to pinhole formation induces preferential local indium incorporation. The diffusion of carriers to these areas with reduced band gap enhances the luminescence emission of the quaternary film. The width and intensity of the luminescence appear to be sensitive to the mismatch between the quaternary film and the GaN layer below.
publishDate 2001
dc.date.none.fl_str_mv 2001
2001-11-01
2001
2001-11-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/58811
url https://hdl.handle.net/20.500.14352/58811
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,301629

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