Noise performance of submicron HEMT channels under low power consumption operation

We have investigated the noise performance of HEMT devices for low noise operation with the aim of developing a noise model valid for low power biasing. Analytical expressions useful for CAD models have been derived for the calculation of the Pospieszalski gate and drain temperatures, and have been...

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Detalhes bibliográficos
Autores: Miranda Pantoja, José Miguel, Sebastián Franco, José Luis
Formato: capítulo de livro
Fecha de publicación:2000
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/60815
Acesso em linha:https://hdl.handle.net/20.500.14352/60815
Access Level:acceso abierto
Palavra-chave:537
Models.
Electricidad
Electrónica (Física)
2202.03 Electricidad
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oai_identifier_str oai:docta.ucm.es:20.500.14352/60815
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repository_id_str
spelling Noise performance of submicron HEMT channels under low power consumption operationMiranda Pantoja, José MiguelSebastián Franco, José Luis537Models.ElectricidadElectrónica (Física)2202.03 ElectricidadWe have investigated the noise performance of HEMT devices for low noise operation with the aim of developing a noise model valid for low power biasing. Analytical expressions useful for CAD models have been derived for the calculation of the Pospieszalski gate and drain temperatures, and have been verified from near pinchoff conditions up to usual bias voltages. An overshoot in the drain temperature as a function of the drain voltage has been observed at low drain currents in deep submicron gate lenght devices.IEEEUniversidad Complutense de Madrid20002000-01-0120002000-01-01book parthttp://purl.org/coar/resource_type/c_3248info:eu-repo/semantics/bookPartapplication/pdfhttps://hdl.handle.net/20.500.14352/60815reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/608152026-06-02T12:44:21Z
dc.title.none.fl_str_mv Noise performance of submicron HEMT channels under low power consumption operation
title Noise performance of submicron HEMT channels under low power consumption operation
spellingShingle Noise performance of submicron HEMT channels under low power consumption operation
Miranda Pantoja, José Miguel
537
Models.
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short Noise performance of submicron HEMT channels under low power consumption operation
title_full Noise performance of submicron HEMT channels under low power consumption operation
title_fullStr Noise performance of submicron HEMT channels under low power consumption operation
title_full_unstemmed Noise performance of submicron HEMT channels under low power consumption operation
title_sort Noise performance of submicron HEMT channels under low power consumption operation
dc.creator.none.fl_str_mv Miranda Pantoja, José Miguel
Sebastián Franco, José Luis
author Miranda Pantoja, José Miguel
author_facet Miranda Pantoja, José Miguel
Sebastián Franco, José Luis
author_role author
author2 Sebastián Franco, José Luis
author2_role author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
Models.
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
Models.
Electricidad
Electrónica (Física)
2202.03 Electricidad
description We have investigated the noise performance of HEMT devices for low noise operation with the aim of developing a noise model valid for low power biasing. Analytical expressions useful for CAD models have been derived for the calculation of the Pospieszalski gate and drain temperatures, and have been verified from near pinchoff conditions up to usual bias voltages. An overshoot in the drain temperature as a function of the drain voltage has been observed at low drain currents in deep submicron gate lenght devices.
publishDate 2000
dc.date.none.fl_str_mv 2000
2000-01-01
2000
2000-01-01
dc.type.none.fl_str_mv book part
http://purl.org/coar/resource_type/c_3248
dc.type.openaire.fl_str_mv info:eu-repo/semantics/bookPart
format bookPart
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/60815
url https://hdl.handle.net/20.500.14352/60815
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IEEE
publisher.none.fl_str_mv IEEE
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.300724

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