Characterization of parasitics in microwave devices by comparing S and noise parameter measurements with two different on wafer calibration techniques
This paper presents a procedure for an accurate characterization of parasitic effects of terminal pads in microwave devices. This procedure is based on the measurement of S and Noise parameters of the device with two different sets of calibration standards, and simplifies the process of extracting t...
| Autores: | , , |
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| Tipo de documento: | capítulo de livro |
| Data de publicação: | 2001 |
| País: | España |
| Recursos: | Universidad Complutense de Madrid (UCM) |
| Repositório: | Docta Complutense |
| Idioma: | inglês |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/60814 |
| Acesso em linha: | https://hdl.handle.net/20.500.14352/60814 |
| Access Level: | Acceso aberto |
| Palavra-chave: | 537 Signal. Electricidad Electrónica (Física) 2202.03 Electricidad |
| Resumo: | This paper presents a procedure for an accurate characterization of parasitic effects of terminal pads in microwave devices. This procedure is based on the measurement of S and Noise parameters of the device with two different sets of calibration standards, and simplifies the process of extracting the parasitic elements of the small signal equivalent circuit. |
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