Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals

The II-VI compound semiconductor crystal cadmium zinc telluride (CZT) is very important in the field of room-temperature radiation detectors and medical imaging applications. In the present study, bulk CZT single crystal has been grown by (i) oscillatory Bridgman technique, (ii) from vapour phase us...

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Autores: Carcelen, V., Vijayan, N., Rodríguez Fernández, J., Hidalgo Alcalde, Pedro, Piqueras De Noriega, Francisco Javier, Sochinskii, N. V., Pérez, J. M., Dieguez, E.
Tipo de recurso: artículo
Fecha de publicación:2009
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/44203
Acceso en línea:https://hdl.handle.net/20.500.14352/44203
Access Level:acceso abierto
Palabra clave:538.9
Vertical Bridgman
Cdznte
Detectors
Ray
Física de materiales
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oai_identifier_str oai:docta.ucm.es:20.500.14352/44203
network_acronym_str ES
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repository_id_str
spelling Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystalsCarcelen, V.Vijayan, N.Rodríguez Fernández, J.Hidalgo Alcalde, PedroPiqueras De Noriega, Francisco JavierSochinskii, N. V.Pérez, J. M.Dieguez, E.538.9Vertical BridgmanCdznteDetectorsRayFísica de materialesThe II-VI compound semiconductor crystal cadmium zinc telluride (CZT) is very important in the field of room-temperature radiation detectors and medical imaging applications. In the present study, bulk CZT single crystal has been grown by (i) oscillatory Bridgman technique, (ii) from vapour phase using pyrolytic boron nitride ampoule in the Bridgman geometry, and (iii) by using a Pt tube used for the ampoule support as a cold finger. Several improvements were found in the thermal environments such as the effects of superheating and reduced growth velocity, as well as improvements in the grain size and zinc composition along the ingot. The compositional homogeneity and its current-voltage characteristic behaviour have been analysed using energy dispersive X-ray analysis and I-V method, respectively.Elsevier Science BVUniversidad Complutense de Madrid20092009-02-1520092009-02-15journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/44203reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/442032026-06-02T12:44:21Z
dc.title.none.fl_str_mv Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals
title Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals
spellingShingle Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals
Carcelen, V.
538.9
Vertical Bridgman
Cdznte
Detectors
Ray
Física de materiales
title_short Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals
title_full Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals
title_fullStr Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals
title_full_unstemmed Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals
title_sort Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals
dc.creator.none.fl_str_mv Carcelen, V.
Vijayan, N.
Rodríguez Fernández, J.
Hidalgo Alcalde, Pedro
Piqueras De Noriega, Francisco Javier
Sochinskii, N. V.
Pérez, J. M.
Dieguez, E.
author Carcelen, V.
author_facet Carcelen, V.
Vijayan, N.
Rodríguez Fernández, J.
Hidalgo Alcalde, Pedro
Piqueras De Noriega, Francisco Javier
Sochinskii, N. V.
Pérez, J. M.
Dieguez, E.
author_role author
author2 Vijayan, N.
Rodríguez Fernández, J.
Hidalgo Alcalde, Pedro
Piqueras De Noriega, Francisco Javier
Sochinskii, N. V.
Pérez, J. M.
Dieguez, E.
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Vertical Bridgman
Cdznte
Detectors
Ray
Física de materiales
topic 538.9
Vertical Bridgman
Cdznte
Detectors
Ray
Física de materiales
description The II-VI compound semiconductor crystal cadmium zinc telluride (CZT) is very important in the field of room-temperature radiation detectors and medical imaging applications. In the present study, bulk CZT single crystal has been grown by (i) oscillatory Bridgman technique, (ii) from vapour phase using pyrolytic boron nitride ampoule in the Bridgman geometry, and (iii) by using a Pt tube used for the ampoule support as a cold finger. Several improvements were found in the thermal environments such as the effects of superheating and reduced growth velocity, as well as improvements in the grain size and zinc composition along the ingot. The compositional homogeneity and its current-voltage characteristic behaviour have been analysed using energy dispersive X-ray analysis and I-V method, respectively.
publishDate 2009
dc.date.none.fl_str_mv 2009
2009-02-15
2009
2009-02-15
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/44203
url https://hdl.handle.net/20.500.14352/44203
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier Science BV
publisher.none.fl_str_mv Elsevier Science BV
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869417667102769152
score 15.301603

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