Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals
The II-VI compound semiconductor crystal cadmium zinc telluride (CZT) is very important in the field of room-temperature radiation detectors and medical imaging applications. In the present study, bulk CZT single crystal has been grown by (i) oscillatory Bridgman technique, (ii) from vapour phase us...
| Autores: | , , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2009 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/44203 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/44203 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Vertical Bridgman Cdznte Detectors Ray Física de materiales |
| Sumario: | The II-VI compound semiconductor crystal cadmium zinc telluride (CZT) is very important in the field of room-temperature radiation detectors and medical imaging applications. In the present study, bulk CZT single crystal has been grown by (i) oscillatory Bridgman technique, (ii) from vapour phase using pyrolytic boron nitride ampoule in the Bridgman geometry, and (iii) by using a Pt tube used for the ampoule support as a cold finger. Several improvements were found in the thermal environments such as the effects of superheating and reduced growth velocity, as well as improvements in the grain size and zinc composition along the ingot. The compositional homogeneity and its current-voltage characteristic behaviour have been analysed using energy dispersive X-ray analysis and I-V method, respectively. |
|---|