Effect of laser irradiation on the luminescence of Mg and Si-doped GaN films
Pulsed laser treatments have been performed in GaN samples of both n- and p-type conductivity. The laser induced changes have been monitored by emissive mode and cathodoluminescence (CL) in a scanning electron microscope. Emissive mode observations indicate a moderate laser induced recrystallization...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1999 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59139 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/59139 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Light-Emitting-Diodes Iii-V Nitride Thin-Films Blue Cathodoluminescence Física de materiales |
| Sumario: | Pulsed laser treatments have been performed in GaN samples of both n- and p-type conductivity. The laser induced changes have been monitored by emissive mode and cathodoluminescence (CL) in a scanning electron microscope. Emissive mode observations indicate a moderate laser induced recrystallization. The luminescent emission has been characterized in both types of samples, GaN:Si and GaN:Mg. Whereas the evolution of CL in the Si doped samples could be explained by the occurrence of laser induced annealing, the luminescent behavior of the Mg doped samples upon irradiation seems to be more complex and a strong relation with the compensation or Mg activation is suggested. Several luminescence bands with maxima ranging from 3.3 to 2.7 eV and their dependence on irradiation conditions have been studied. |
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