Cathodoluminescence characterization of Ge-doped CdTe crystals
Cathodoluminescence (CL) microscopic techniques have been used to study the spatial distribution of structural defects and the deep levels in CdTe:Ge bulk crystals. The effect of Ge doping with concentrations of 10(17) and 10(19) cm(-3) on the compensation of V-Cd in CdTe has been investigated. Depe...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1995 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59253 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/59253 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Cadmium Telluride Photoluminescence Temperature Defects Física de materiales |
| Sumario: | Cathodoluminescence (CL) microscopic techniques have been used to study the spatial distribution of structural defects and the deep levels in CdTe:Ge bulk crystals. The effect of Ge doping with concentrations of 10(17) and 10(19) cm(-3) on the compensation of V-Cd in CdTe has been investigated. Dependence of the intensity distribution of CL emission bands on the dopant concentration has been studied. Ge doping causes a substantial reduction of the generally referred to 1.40 eV luminescence, which is often present in undoped CdTe crystals, and enhances the 0.91 and 0.81 eV emissions. |
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