CL study of blue and UV emissions in ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN

We report a cathodoluminescence (CL) study of ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN on Si(100) and Au/Si(00) substrates. Condensation and subsequent oxidation of metallic Ga is suggested as the growth mechanism of ß-Ga_2O_3 nanowires. The ß-Ga_2O_3 nanowires grown on Si(100) show m...

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Detalles Bibliográficos
Autores: Guzmán Navarro, G, Herrera Zaldivar, M., Valenzuela Benavides, J., Maestre Varea, David
Tipo de recurso: artículo
Fecha de publicación:2011
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/42746
Acceso en línea:https://hdl.handle.net/20.500.14352/42746
Access Level:acceso abierto
Palabra clave:538.9
Luminescence
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
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spelling CL study of blue and UV emissions in ß-Ga_2O_3 nanowires grown by thermal evaporation of GaNGuzmán Navarro, GHerrera Zaldivar, M.Valenzuela Benavides, J.Maestre Varea, David538.9LuminescenceFísica de materialesFísica del estado sólido2211 Física del Estado SólidoWe report a cathodoluminescence (CL) study of ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN on Si(100) and Au/Si(00) substrates. Condensation and subsequent oxidation of metallic Ga is suggested as the growth mechanism of ß-Ga_2O_3 nanowires. The ß-Ga_2O_3 nanowires grown on Si(100) show multiple bends or undulations, together with a strong UV emission at 3.31 eV and a weak blue emission centered at 2.8 eV as a band component. The ß-Ga_2O_3 nanowires grown on Au/Si(100) substrates recorded a lower CL intensity of a well-defined blue emission of 2.8 eV. A thermal treatment on these samples produced an increase of the UV emission and quenching of the blue band. Thermal annealing of oxygen vacancies is proposed as the responsible mechanism for the observed behavior of these samples.American Institute of PhysicsUniversidad Complutense de Madrid20112011-07-0120112011-07-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/42746reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/427462026-06-02T12:44:21Z
dc.title.none.fl_str_mv CL study of blue and UV emissions in ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN
title CL study of blue and UV emissions in ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN
spellingShingle CL study of blue and UV emissions in ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN
Guzmán Navarro, G
538.9
Luminescence
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
title_short CL study of blue and UV emissions in ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN
title_full CL study of blue and UV emissions in ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN
title_fullStr CL study of blue and UV emissions in ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN
title_full_unstemmed CL study of blue and UV emissions in ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN
title_sort CL study of blue and UV emissions in ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN
dc.creator.none.fl_str_mv Guzmán Navarro, G
Herrera Zaldivar, M.
Valenzuela Benavides, J.
Maestre Varea, David
author Guzmán Navarro, G
author_facet Guzmán Navarro, G
Herrera Zaldivar, M.
Valenzuela Benavides, J.
Maestre Varea, David
author_role author
author2 Herrera Zaldivar, M.
Valenzuela Benavides, J.
Maestre Varea, David
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Luminescence
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
topic 538.9
Luminescence
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
description We report a cathodoluminescence (CL) study of ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN on Si(100) and Au/Si(00) substrates. Condensation and subsequent oxidation of metallic Ga is suggested as the growth mechanism of ß-Ga_2O_3 nanowires. The ß-Ga_2O_3 nanowires grown on Si(100) show multiple bends or undulations, together with a strong UV emission at 3.31 eV and a weak blue emission centered at 2.8 eV as a band component. The ß-Ga_2O_3 nanowires grown on Au/Si(100) substrates recorded a lower CL intensity of a well-defined blue emission of 2.8 eV. A thermal treatment on these samples produced an increase of the UV emission and quenching of the blue band. Thermal annealing of oxygen vacancies is proposed as the responsible mechanism for the observed behavior of these samples.
publishDate 2011
dc.date.none.fl_str_mv 2011
2011-07-01
2011
2011-07-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/42746
url https://hdl.handle.net/20.500.14352/42746
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,298079

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