Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S
We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S. The measurements performed with spin- and angle-resolved photoelectron spectroscopy as well as density functional theory and GW calculations revealed a wide-band-gap three-d...
| Autores: | , , , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2018 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/177952 |
| Acceso en línea: | http://hdl.handle.net/10261/177952 |
| Access Level: | acceso abierto |
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Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2SAnnese, E.Okuda, TaichiIwasawa, K.Shimada, K.Natamane, M.Taniguchi, M.Rusinov, Igor P.Eremeev, Sergey V.Kokh, Konstantin A.Golyashov, V. A.Tereshchenko, Oleg E.Chulkov, Eugene V.Kimura, A.We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S. The measurements performed with spin- and angle-resolved photoelectron spectroscopy as well as density functional theory and GW calculations revealed a wide-band-gap three-dimensional topological insulator phase. The surface electronic spectrum is characterized by the topological surface state (TSS) with Dirac point located above the valence band and Fermi level lying in the band gap. TSS band dispersion and constant energy contour manifest a weak warping effect near the Fermi level along with in-plane and out-of-plane spin polarization along the Γ-K̄ line. We identified four additional states at deeper binding energies with high in-plane spin polarization.We acknowledge partial support from the Saint Petersburg State University (Grant No. 15.61.202.2015), Tomsk State University competitiveness improvement program (Project No. 8.1.01.2017), and the Spanish Ministry of Science and Innovation (Grant No. FIS2016-75862-P). This study was partially supported by the Russian Science Foundation (Projects No. 17-12-01047, for the electrophysical properties, and No. 18-12-00169, for the theoretical calculations) and by the Russian Foundation for Basic Research (Project No. 17-08-00955, for the crystal growth and structural characterization). S.V.E. acknowledges support by the Fundamental Research Program of the State Academies of Sciences for 2013–2020. I.P.R. acknowledges support by the Ministry of Education and Science of the Russian Federation within the framework of the governmental program Megagrants (state task No. 3.8895.2017/P220). A.K. was financially supported by KAKENHI Grants No. 26247064 and No. 17H06138.Peer ReviewedAmerican Physical SocietySaint Petersburg State UniversityMinisterio de Ciencia e Innovación (España)Ministerio de Economía y Competitividad (España)Russian Science FoundationRussian Foundation for Basic ResearchRussian Academy of SciencesMinistry of Education and Science of the Russian FederationJapan Society for the Promotion of ScienceTomsk State UniversityConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]2019201920182019info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/177952reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/FIS2016-75862-Phttps://doi.org/10.1103/PhysRevB.97.205113Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/1779522026-05-22T06:33:51Z |
| dc.title.none.fl_str_mv |
Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S |
| title |
Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S |
| spellingShingle |
Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S Annese, E. |
| title_short |
Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S |
| title_full |
Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S |
| title_fullStr |
Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S |
| title_full_unstemmed |
Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S |
| title_sort |
Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S |
| dc.creator.none.fl_str_mv |
Annese, E. Okuda, Taichi Iwasawa, K. Shimada, K. Natamane, M. Taniguchi, M. Rusinov, Igor P. Eremeev, Sergey V. Kokh, Konstantin A. Golyashov, V. A. Tereshchenko, Oleg E. Chulkov, Eugene V. Kimura, A. |
| author |
Annese, E. |
| author_facet |
Annese, E. Okuda, Taichi Iwasawa, K. Shimada, K. Natamane, M. Taniguchi, M. Rusinov, Igor P. Eremeev, Sergey V. Kokh, Konstantin A. Golyashov, V. A. Tereshchenko, Oleg E. Chulkov, Eugene V. Kimura, A. |
| author_role |
author |
| author2 |
Okuda, Taichi Iwasawa, K. Shimada, K. Natamane, M. Taniguchi, M. Rusinov, Igor P. Eremeev, Sergey V. Kokh, Konstantin A. Golyashov, V. A. Tereshchenko, Oleg E. Chulkov, Eugene V. Kimura, A. |
| author2_role |
author author author author author author author author author author author author |
| dc.contributor.none.fl_str_mv |
Saint Petersburg State University Ministerio de Ciencia e Innovación (España) Ministerio de Economía y Competitividad (España) Russian Science Foundation Russian Foundation for Basic Research Russian Academy of Sciences Ministry of Education and Science of the Russian Federation Japan Society for the Promotion of Science Tomsk State University Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72] |
| description |
We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S. The measurements performed with spin- and angle-resolved photoelectron spectroscopy as well as density functional theory and GW calculations revealed a wide-band-gap three-dimensional topological insulator phase. The surface electronic spectrum is characterized by the topological surface state (TSS) with Dirac point located above the valence band and Fermi level lying in the band gap. TSS band dispersion and constant energy contour manifest a weak warping effect near the Fermi level along with in-plane and out-of-plane spin polarization along the Γ-K̄ line. We identified four additional states at deeper binding energies with high in-plane spin polarization. |
| publishDate |
2018 |
| dc.date.none.fl_str_mv |
2018 2019 2019 2019 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article http://purl.org/coar/resource_type/c_6501 Publisher's version info:eu-repo/semantics/publishedVersion |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.none.fl_str_mv |
http://hdl.handle.net/10261/177952 |
| url |
http://hdl.handle.net/10261/177952 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
#PLACEHOLDER_PARENT_METADATA_VALUE# info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/FIS2016-75862-P https://doi.org/10.1103/PhysRevB.97.205113 Sí |
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info:eu-repo/semantics/openAccess |
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openAccess |
| dc.publisher.none.fl_str_mv |
American Physical Society |
| publisher.none.fl_str_mv |
American Physical Society |
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reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC instname:Consejo Superior de Investigaciones Científicas (CSIC) |
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Consejo Superior de Investigaciones Científicas (CSIC) |
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DIGITAL.CSIC. Repositorio Institucional del CSIC |
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DIGITAL.CSIC. Repositorio Institucional del CSIC |
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1869416921496027136 |
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15,812429 |