Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S

We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S. The measurements performed with spin- and angle-resolved photoelectron spectroscopy as well as density functional theory and GW calculations revealed a wide-band-gap three-d...

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Autores: Annese, E., Okuda, Taichi, Iwasawa, K., Shimada, K., Natamane, M., Taniguchi, M., Rusinov, Igor P., Eremeev, Sergey V., Kokh, Konstantin A., Golyashov, V. A., Tereshchenko, Oleg E., Chulkov, Eugene V., Kimura, A.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2018
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/177952
Acceso en línea:http://hdl.handle.net/10261/177952
Access Level:acceso abierto
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spelling Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2SAnnese, E.Okuda, TaichiIwasawa, K.Shimada, K.Natamane, M.Taniguchi, M.Rusinov, Igor P.Eremeev, Sergey V.Kokh, Konstantin A.Golyashov, V. A.Tereshchenko, Oleg E.Chulkov, Eugene V.Kimura, A.We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S. The measurements performed with spin- and angle-resolved photoelectron spectroscopy as well as density functional theory and GW calculations revealed a wide-band-gap three-dimensional topological insulator phase. The surface electronic spectrum is characterized by the topological surface state (TSS) with Dirac point located above the valence band and Fermi level lying in the band gap. TSS band dispersion and constant energy contour manifest a weak warping effect near the Fermi level along with in-plane and out-of-plane spin polarization along the Γ-K̄ line. We identified four additional states at deeper binding energies with high in-plane spin polarization.We acknowledge partial support from the Saint Petersburg State University (Grant No. 15.61.202.2015), Tomsk State University competitiveness improvement program (Project No. 8.1.01.2017), and the Spanish Ministry of Science and Innovation (Grant No. FIS2016-75862-P). This study was partially supported by the Russian Science Foundation (Projects No. 17-12-01047, for the electrophysical properties, and No. 18-12-00169, for the theoretical calculations) and by the Russian Foundation for Basic Research (Project No. 17-08-00955, for the crystal growth and structural characterization). S.V.E. acknowledges support by the Fundamental Research Program of the State Academies of Sciences for 2013–2020. I.P.R. acknowledges support by the Ministry of Education and Science of the Russian Federation within the framework of the governmental program Megagrants (state task No. 3.8895.2017/P220). A.K. was financially supported by KAKENHI Grants No. 26247064 and No. 17H06138.Peer ReviewedAmerican Physical SocietySaint Petersburg State UniversityMinisterio de Ciencia e Innovación (España)Ministerio de Economía y Competitividad (España)Russian Science FoundationRussian Foundation for Basic ResearchRussian Academy of SciencesMinistry of Education and Science of the Russian FederationJapan Society for the Promotion of ScienceTomsk State UniversityConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]2019201920182019info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/177952reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/FIS2016-75862-Phttps://doi.org/10.1103/PhysRevB.97.205113Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/1779522026-05-22T06:33:51Z
dc.title.none.fl_str_mv Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S
title Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S
spellingShingle Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S
Annese, E.
title_short Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S
title_full Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S
title_fullStr Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S
title_full_unstemmed Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S
title_sort Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S
dc.creator.none.fl_str_mv Annese, E.
Okuda, Taichi
Iwasawa, K.
Shimada, K.
Natamane, M.
Taniguchi, M.
Rusinov, Igor P.
Eremeev, Sergey V.
Kokh, Konstantin A.
Golyashov, V. A.
Tereshchenko, Oleg E.
Chulkov, Eugene V.
Kimura, A.
author Annese, E.
author_facet Annese, E.
Okuda, Taichi
Iwasawa, K.
Shimada, K.
Natamane, M.
Taniguchi, M.
Rusinov, Igor P.
Eremeev, Sergey V.
Kokh, Konstantin A.
Golyashov, V. A.
Tereshchenko, Oleg E.
Chulkov, Eugene V.
Kimura, A.
author_role author
author2 Okuda, Taichi
Iwasawa, K.
Shimada, K.
Natamane, M.
Taniguchi, M.
Rusinov, Igor P.
Eremeev, Sergey V.
Kokh, Konstantin A.
Golyashov, V. A.
Tereshchenko, Oleg E.
Chulkov, Eugene V.
Kimura, A.
author2_role author
author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Saint Petersburg State University
Ministerio de Ciencia e Innovación (España)
Ministerio de Economía y Competitividad (España)
Russian Science Foundation
Russian Foundation for Basic Research
Russian Academy of Sciences
Ministry of Education and Science of the Russian Federation
Japan Society for the Promotion of Science
Tomsk State University
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
description We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S. The measurements performed with spin- and angle-resolved photoelectron spectroscopy as well as density functional theory and GW calculations revealed a wide-band-gap three-dimensional topological insulator phase. The surface electronic spectrum is characterized by the topological surface state (TSS) with Dirac point located above the valence band and Fermi level lying in the band gap. TSS band dispersion and constant energy contour manifest a weak warping effect near the Fermi level along with in-plane and out-of-plane spin polarization along the Γ-K̄ line. We identified four additional states at deeper binding energies with high in-plane spin polarization.
publishDate 2018
dc.date.none.fl_str_mv 2018
2019
2019
2019
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/177952
url http://hdl.handle.net/10261/177952
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/FIS2016-75862-P
https://doi.org/10.1103/PhysRevB.97.205113

dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
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