Evidence for a direct band gap in the topological insulator Bi 2Se3 from theory and experiment

Using angle-resolved photoelectron spectroscopy and ab initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Γ point. Experimentally, this is shown by a three-dimensional band mapping in large fractions...

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Detalles Bibliográficos
Autores: Nechaev, I. A., Hatch, R. C., Bianchi, Marco, Guan, D., Friedrich, C., Aguilera, I., Mi, J. L., Iversen, B. B., Blügel, S., Hofmann, Ph., Chulkov, Eugene V.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2013
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/102407
Acceso en línea:http://hdl.handle.net/10261/102407
Access Level:acceso abierto
Palabra clave:ddc:530
Descripción
Sumario:Using angle-resolved photoelectron spectroscopy and ab initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Γ point. Experimentally, this is shown by a three-dimensional band mapping in large fractions of the Brillouin zone. Theoretically, we demonstrate that the valence-band maximum is located at the Γ point only if many-body effects are included in the calculation. Otherwise, it is found in a high-symmetry mirror plane away from the zone center. © 2013 American Physical Society.

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