Engineered optical and electronic properties in β-Ga_2O_3/SnO_2 nanowire networks
Integration of semiconductor nanowires is critical for developing scalable and versatile nanodevices, but challenges remain in tailoring optical emission, forming reliable p-n junctions, and ensuring consistent nanoscale interconnection. Here, we investigate Ga2O3/SnO2 multiwire architectures using...
| Autores: | , , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/122958 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/122958 |
| Access Level: | acceso embargado |
| Palabra clave: | 538.9 621.38 Nanowire networks Synchrotron nanoprobe UV emission Doping engineering Oxide semiconductors Física de materiales 2211 Física del Estado Sólido 2211.25 Semiconductores |
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Engineered optical and electronic properties in β-Ga_2O_3/SnO_2 nanowire networksDolado Fernández, Jaime JoséPérez Peinado, PaulaCarrasco Madrigal, DanielMartínez Casado, RuthBonino, ValentinaNogales Díaz, EmilioMéndez Martín, María BianchiMartínez Criado, Gema538.9621.38Nanowire networksSynchrotron nanoprobeUV emissionDoping engineeringOxide semiconductorsFísica de materiales2211 Física del Estado Sólido2211.25 SemiconductoresIntegration of semiconductor nanowires is critical for developing scalable and versatile nanodevices, but challenges remain in tailoring optical emission, forming reliable p-n junctions, and ensuring consistent nanoscale interconnection. Here, we investigate Ga2O3/SnO2 multiwire architectures using synchrotron-based X-ray fluorescence (XRF), X-ray excited optical luminescence (XEOL), X-ray absorption near-edge spectroscopy (XANES), and first-principles simulations. We map dopant distribution, analyze nanoscale optical responses, and determine dopant atomic coordination. The central wire is predominantly Sn-doped Ga2O3, while crossed wires are Ga-doped SnO2. XEOL maps reveal a pronounced enhancement of the 3.5 eV ultraviolet emission in Ga2O3 at the junctions, enabling controlled optical modulation. XANES and ab initio calculations confirm that Sn and Ga dopants preferentially occupy octahedral sites, introducing donor levels in Ga2O3 and acceptor levels in SnO2. This research significantly advances our understanding of dopant effects in complex semiconductor nanowire systems, paving the way for controlled optical emissions in Ga2O3/SnO2 multiwire architectures.American Chemical SocietyUniversidad Complutense de Madrid20252025-07-1120252025-07-11journal articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfapplication/pdfhttps://hdl.handle.net/20.500.14352/122958reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)InglésengAgencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023 PID2021-122562NB-I00 INTERACCION LUZ-MATERIA EN NANO-MEMBRANAS DE OXIDOS METALICOS DE GAP ANCHO PARA DISPOSITIVOS AUTOALIMENTABLESAgencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023 TED2021-130139B-I00Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023 PCI2023-143388 P-N HETEROJUNCTIONS OF EMERGENT WIDE BAND GAP OXIDES FOR SELF-POWERED UVC SENSINGembargoed accesshttp://purl.org/coar/access_right/c_f1cfinfo:eu-repo/semantics/embargoedAccessoai:docta.ucm.es:20.500.14352/1229582026-06-02T12:44:21Z |
| dc.title.none.fl_str_mv |
Engineered optical and electronic properties in β-Ga_2O_3/SnO_2 nanowire networks |
| title |
Engineered optical and electronic properties in β-Ga_2O_3/SnO_2 nanowire networks |
| spellingShingle |
Engineered optical and electronic properties in β-Ga_2O_3/SnO_2 nanowire networks Dolado Fernández, Jaime José 538.9 621.38 Nanowire networks Synchrotron nanoprobe UV emission Doping engineering Oxide semiconductors Física de materiales 2211 Física del Estado Sólido 2211.25 Semiconductores |
| title_short |
Engineered optical and electronic properties in β-Ga_2O_3/SnO_2 nanowire networks |
| title_full |
Engineered optical and electronic properties in β-Ga_2O_3/SnO_2 nanowire networks |
| title_fullStr |
Engineered optical and electronic properties in β-Ga_2O_3/SnO_2 nanowire networks |
| title_full_unstemmed |
Engineered optical and electronic properties in β-Ga_2O_3/SnO_2 nanowire networks |
| title_sort |
Engineered optical and electronic properties in β-Ga_2O_3/SnO_2 nanowire networks |
| dc.creator.none.fl_str_mv |
Dolado Fernández, Jaime José Pérez Peinado, Paula Carrasco Madrigal, Daniel Martínez Casado, Ruth Bonino, Valentina Nogales Díaz, Emilio Méndez Martín, María Bianchi Martínez Criado, Gema |
| author |
Dolado Fernández, Jaime José |
| author_facet |
Dolado Fernández, Jaime José Pérez Peinado, Paula Carrasco Madrigal, Daniel Martínez Casado, Ruth Bonino, Valentina Nogales Díaz, Emilio Méndez Martín, María Bianchi Martínez Criado, Gema |
| author_role |
author |
| author2 |
Pérez Peinado, Paula Carrasco Madrigal, Daniel Martínez Casado, Ruth Bonino, Valentina Nogales Díaz, Emilio Méndez Martín, María Bianchi Martínez Criado, Gema |
| author2_role |
author author author author author author author |
| dc.contributor.none.fl_str_mv |
Universidad Complutense de Madrid |
| dc.subject.none.fl_str_mv |
538.9 621.38 Nanowire networks Synchrotron nanoprobe UV emission Doping engineering Oxide semiconductors Física de materiales 2211 Física del Estado Sólido 2211.25 Semiconductores |
| topic |
538.9 621.38 Nanowire networks Synchrotron nanoprobe UV emission Doping engineering Oxide semiconductors Física de materiales 2211 Física del Estado Sólido 2211.25 Semiconductores |
| description |
Integration of semiconductor nanowires is critical for developing scalable and versatile nanodevices, but challenges remain in tailoring optical emission, forming reliable p-n junctions, and ensuring consistent nanoscale interconnection. Here, we investigate Ga2O3/SnO2 multiwire architectures using synchrotron-based X-ray fluorescence (XRF), X-ray excited optical luminescence (XEOL), X-ray absorption near-edge spectroscopy (XANES), and first-principles simulations. We map dopant distribution, analyze nanoscale optical responses, and determine dopant atomic coordination. The central wire is predominantly Sn-doped Ga2O3, while crossed wires are Ga-doped SnO2. XEOL maps reveal a pronounced enhancement of the 3.5 eV ultraviolet emission in Ga2O3 at the junctions, enabling controlled optical modulation. XANES and ab initio calculations confirm that Sn and Ga dopants preferentially occupy octahedral sites, introducing donor levels in Ga2O3 and acceptor levels in SnO2. This research significantly advances our understanding of dopant effects in complex semiconductor nanowire systems, paving the way for controlled optical emissions in Ga2O3/SnO2 multiwire architectures. |
| publishDate |
2025 |
| dc.date.none.fl_str_mv |
2025 2025-07-11 2025 2025-07-11 |
| dc.type.none.fl_str_mv |
journal article http://purl.org/coar/resource_type/c_6501 AM http://purl.org/coar/version/c_ab4af688f83e57aa |
| dc.type.openaire.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/20.500.14352/122958 |
| url |
https://hdl.handle.net/20.500.14352/122958 |
| dc.language.none.fl_str_mv |
Inglés eng |
| language_invalid_str_mv |
Inglés |
| language |
eng |
| dc.relation.none.fl_str_mv |
Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023 PID2021-122562NB-I00 INTERACCION LUZ-MATERIA EN NANO-MEMBRANAS DE OXIDOS METALICOS DE GAP ANCHO PARA DISPOSITIVOS AUTOALIMENTABLES Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023 TED2021-130139B-I00 Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023 PCI2023-143388 P-N HETEROJUNCTIONS OF EMERGENT WIDE BAND GAP OXIDES FOR SELF-POWERED UVC SENSING |
| dc.rights.none.fl_str_mv |
embargoed access http://purl.org/coar/access_right/c_f1cf |
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info:eu-repo/semantics/embargoedAccess |
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embargoed access http://purl.org/coar/access_right/c_f1cf |
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embargoedAccess |
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application/pdf application/pdf |
| dc.publisher.none.fl_str_mv |
American Chemical Society |
| publisher.none.fl_str_mv |
American Chemical Society |
| dc.source.none.fl_str_mv |
reponame:Docta Complutense instname:Universidad Complutense de Madrid (UCM) |
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Universidad Complutense de Madrid (UCM) |
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