Oxidation of Amorphous Porous VOx at Low Temperatures for the Formation of Thermochromic VO2 Films
Thermochromic VO2 crystalline domains have been formed in amorphous nanocolumnar VOx films by means of a low-temperature oxidation process. The oxidation of an amorphous film with [O]/[V] below 1.9 favors the formation of VO2, V3O7, and V2O5 crystalline domains in the material for temperatures as lo...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2026 |
| País: | España |
| Institución: | Universidad de Sevilla (US) |
| Repositorio: | idUS. Depósito de Investigación de la Universidad de Sevilla |
| OAI Identifier: | oai:dnet:idus________::287e523dcac4a610f2acc03a5bd24c1d |
| Acceso en línea: | https://hdl.handle.net/11441/184829 https://doi.org/10.3390/nano16020130 |
| Access Level: | acceso abierto |
| Palabra clave: | Thermochromic films Porous films Magnetron sputtering Oblique angle deposition Nanocolumns |
| Sumario: | Thermochromic VO2 crystalline domains have been formed in amorphous nanocolumnar VOx films by means of a low-temperature oxidation process. The oxidation of an amorphous film with [O]/[V] below 1.9 favors the formation of VO2, V3O7, and V2O5 crystalline domains in the material for temperatures as low as 260 °C, while values above 1.9 lead to the sole formation of the V2O5 phase. It is found that the absorption of oxygen also causes a relevant film volume expansion that makes pores shrink. Under some specific conditions, low-temperature oxidation causes the near disappearance of the amorphous regions, clearly improving the overall transparency and optimizing the optical and electrical modulation capabilities associated with the presence of crystalline VO2 domains. The best thermochromic performance was found when the original stoichiometry was [O]/[V] = 1.5 and the oxidation temperature was 280 °C. These conditions yield a relatively transparent coating in the visible range that presents an optical modulation in the near-infrared range of nearly 50% and a drop of electrical resistivity of more than two orders of magnitude, with a transition temperature of 50.3 °C. A tentative model based on the volume expansion experienced by the film upon oxidation is proposed, which links the structural/chemical features of the material and the formation of the crystalline domains at such relatively low temperatures. |
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