Highly Bi-doped Cu thin films with large spin-mixing conductance

The spin Hall effect (SHE) provides an efficient tool for the production of pure spin currents, essentially for the next generation of spintronics devices. Giant SHE has been reported in Cu doped with 0.5% Bi grown by sputtering, and larger values are predicted for larger Bi doping. In this work, we...

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Detalles Bibliográficos
Autores: Ruiz-Gómez, Sandra|||0000-0002-9665-2059, Serrano, Aida|||0000-0002-6162-0014, Guerrero, Rubén, Muñoz, Manuel, Lucas del Pozo, Irene, Foerster, Michael|||0000-0002-4147-6668, Aballe, Lucía|||0000-0003-1810-8768, Marco, José F., Amado, Mario|||0000-0002-3296-5064, McKenzie-Sell, Lauren, Di Bernardo, Angelo|||0000-0002-2912-2023, Robinson, Jason W. A., González Barrio, Miguel Ángel, Mascaraque, Arantzazu, Pérez, Lucas|||0000-0001-9470-7987
Tipo de recurso: artículo
Fecha de publicación:2018
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:202527
Acceso en línea:https://ddd.uab.cat/record/202527
https://dx.doi.org/urn:doi:10.1063/1.5049944
Access Level:acceso abierto
Palabra clave:Bi-doped
Bi-doping
Cluster formations
Cu thin film
Cu-doped
Large spin
Spin currents
Spintronics device
Descripción
Sumario:The spin Hall effect (SHE) provides an efficient tool for the production of pure spin currents, essentially for the next generation of spintronics devices. Giant SHE has been reported in Cu doped with 0.5% Bi grown by sputtering, and larger values are predicted for larger Bi doping. In this work, we demonstrate the possibility of doping Cu with up to 10% of Bi atoms without evidence of Bi surface segregation or cluster formation. In addition, YIG/BiCu structures have been grown, showing a spin mixing conductance larger that the one shown by similar Pt/YIG structures, reflecting the potentiality of these new materials.