Highly Bi-doped electrodeposited Cu nanowires for spintronics applications

Bi-doped Cu alloys are promising materials in the field of Spintronics due to the possibility of having efficient charge to spin conversion via spin Hall effect. To explore this effect, in particular at the nanoscale, it is essential to have a growth method that allows the control of crystal quality...

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Detalles Bibliográficos
Autores: Ruiz-Gómez, Sandra, Fernández-González, Claudia, Guedeja-Marrón, Alejandra, Serrano Rubio, Aída, González Barrio, Miguel Ángel, Varela, María, Mascaraque, Arantzazu, Pérez, Lucas
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2022
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/289460
Acceso en línea:http://hdl.handle.net/10261/289460
https://api.elsevier.com/content/abstract/scopus_id/85118826717
Access Level:acceso abierto
Palabra clave:Cu(Bi)
Electrodeposition
Nanowires
Descripción
Sumario:Bi-doped Cu alloys are promising materials in the field of Spintronics due to the possibility of having efficient charge to spin conversion via spin Hall effect. To explore this effect, in particular at the nanoscale, it is essential to have a growth method that allows the control of crystal quality, cluster formation and microstructure. In this paper, we demonstrate that electrochemical deposition is a suitable method for the synthesis of these nanomaterials. We report the growth, by template assisted electrodeposition, of high quality, homogeneous nanowires of a diluted alloy of Bi dispersed into a Cu matrix, in which Bi concentration can be easily varied by tuning electrolyte composition. Structural analysis shows that Bi does not cluster but incorporate into the Cu matrix. The short-range order is nevertheless affected by the deposition potential. Cu is basically metallic, and Cu–Cu nearest-neighbor distances are those of bulk Cu, so Bi enters into the Cu structure substitutionally. Using low overpotential, we demonstrate the possibility of growing single crystal nanowires.