Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element

Multiple spin functionalities are probed on Pt/La2Co0.8Mn1.2O6/Nb:SrTiO3, a device composed by a ferromagnetic insulating barrier sandwiched between non-magnetic electrodes. Uniquely, La2Co0.8Mn1.2O6 thin films present strong perpendicular magnetic anisotropy of magnetocrystalline origin, property o...

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Autores: López Mir, Laura, Frontera, Carlos, Aramberri, Hugo, Bouzehouane, Karim, Cisneros-Fernández, J, Bozzo, Bernat, Balcells, Lluis, Martínez Perea, Benjamín
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2018
País:España
Recursos:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/344179
Acesso em linha:http://hdl.handle.net/10261/344179
https://api.elsevier.com/content/abstract/scopus_id/85040914878
Access Level:acceso abierto
Palavra-chave:Anisotropic strain
Antiferromagnetic
BiFeO3
Critical thickness
Ferroelectric
Multiferroic
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spelling Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic elementLópez Mir, LauraFrontera, CarlosAramberri, HugoBouzehouane, KarimCisneros-Fernández, JBozzo, BernatBalcells, LluisMartínez Perea, BenjamínAnisotropic strainAntiferromagneticBiFeO3Critical thicknessFerroelectricMultiferroicMultiple spin functionalities are probed on Pt/La2Co0.8Mn1.2O6/Nb:SrTiO3, a device composed by a ferromagnetic insulating barrier sandwiched between non-magnetic electrodes. Uniquely, La2Co0.8Mn1.2O6 thin films present strong perpendicular magnetic anisotropy of magnetocrystalline origin, property of major interest for spintronics. The junction has an estimated spin-filtering efficiency of 99.7% and tunneling anisotropic magnetoresistance (TAMR) values up to 30% at low temperatures. This remarkable angular dependence of the magnetoresistance is associated with the magnetic anisotropy whose origin lies in the large spin-orbit interaction of Co2+ which is additionally tuned by the strain of the crystal lattice. Furthermore, we found that the junction can operate as an electrically readable magnetic memory device. The findings of this work demonstrate that a single ferromagnetic insulating barrier with strong magnetocrystalline anisotropy is sufficient for realizing sensor and memory functionalities in a tunneling device based on TAMR.We acknowledge financial support from the Spanish Ministry of Economy and Competitiveness through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV-2015-0496), and project MAT2015-71664-R; and from EU FEDER program. Fruitful discussions with Dr. C. Ocal are acknowledged.Peer reviewedNature Publishing GroupMinisterio de Economía y Competitividad (España)European CommissionConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202420242018info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/344179https://api.elsevier.com/content/abstract/scopus_id/85040914878reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496info:eu-repo/grantAgreement/MINECO//MAT2015-71664-RScientific reportshttp://doi.org/10.1038/s41598-017-19129-5Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3441792026-05-22T06:33:51Z
dc.title.none.fl_str_mv Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element
title Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element
spellingShingle Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element
López Mir, Laura
Anisotropic strain
Antiferromagnetic
BiFeO3
Critical thickness
Ferroelectric
Multiferroic
title_short Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element
title_full Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element
title_fullStr Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element
title_full_unstemmed Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element
title_sort Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element
dc.creator.none.fl_str_mv López Mir, Laura
Frontera, Carlos
Aramberri, Hugo
Bouzehouane, Karim
Cisneros-Fernández, J
Bozzo, Bernat
Balcells, Lluis
Martínez Perea, Benjamín
author López Mir, Laura
author_facet López Mir, Laura
Frontera, Carlos
Aramberri, Hugo
Bouzehouane, Karim
Cisneros-Fernández, J
Bozzo, Bernat
Balcells, Lluis
Martínez Perea, Benjamín
author_role author
author2 Frontera, Carlos
Aramberri, Hugo
Bouzehouane, Karim
Cisneros-Fernández, J
Bozzo, Bernat
Balcells, Lluis
Martínez Perea, Benjamín
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Ministerio de Economía y Competitividad (España)
European Commission
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Anisotropic strain
Antiferromagnetic
BiFeO3
Critical thickness
Ferroelectric
Multiferroic
topic Anisotropic strain
Antiferromagnetic
BiFeO3
Critical thickness
Ferroelectric
Multiferroic
description Multiple spin functionalities are probed on Pt/La2Co0.8Mn1.2O6/Nb:SrTiO3, a device composed by a ferromagnetic insulating barrier sandwiched between non-magnetic electrodes. Uniquely, La2Co0.8Mn1.2O6 thin films present strong perpendicular magnetic anisotropy of magnetocrystalline origin, property of major interest for spintronics. The junction has an estimated spin-filtering efficiency of 99.7% and tunneling anisotropic magnetoresistance (TAMR) values up to 30% at low temperatures. This remarkable angular dependence of the magnetoresistance is associated with the magnetic anisotropy whose origin lies in the large spin-orbit interaction of Co2+ which is additionally tuned by the strain of the crystal lattice. Furthermore, we found that the junction can operate as an electrically readable magnetic memory device. The findings of this work demonstrate that a single ferromagnetic insulating barrier with strong magnetocrystalline anisotropy is sufficient for realizing sensor and memory functionalities in a tunneling device based on TAMR.
publishDate 2018
dc.date.none.fl_str_mv 2018
2024
2024
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/344179
https://api.elsevier.com/content/abstract/scopus_id/85040914878
url http://hdl.handle.net/10261/344179
https://api.elsevier.com/content/abstract/scopus_id/85040914878
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496
info:eu-repo/grantAgreement/MINECO//MAT2015-71664-R
Scientific reports
http://doi.org/10.1038/s41598-017-19129-5
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Nature Publishing Group
publisher.none.fl_str_mv Nature Publishing Group
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,811543

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