Cita APA

López Mir, L., Frontera, C., Aramberri, H., Bouzehouane, K., Cisneros-Fernández, J., Bozzo, B., . . . Martínez Perea, B. (2018). Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element.

Citación estilo Chicago

López Mir, Laura, Carlos Frontera, Hugo Aramberri, Karim Bouzehouane, J. Cisneros-Fernández, Bernat Bozzo, Lluis Balcells, y Benjamín Martínez Perea. Anisotropic Sensor and Memory Device With a Ferromagnetic Tunnel Barrier As the Only Magnetic Element. 2018.

Cita MLA

López Mir, Laura, et al. Anisotropic Sensor and Memory Device With a Ferromagnetic Tunnel Barrier As the Only Magnetic Element. 2018.