Nanometer-Scale Lateral p–n Junctions in Graphene/α-RuCl3 Heterostructures

[EN] The ability to create nanometer-scale lateral p-n junctions is essential for the next generation of two-dimensional (2D) devices. Using the charge-transfer heterostructure graphene/alpha-RuCl3, we realize nanoscale lateral p-n junctions in the vicinity of graphene nanobubbles. Our multipronged...

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Detalhes bibliográficos
Autores: Rizzo, Daniel J., Shabani, Sara, Jessen, Bjarke S., Zhang, Jin, McLeod, Alexander S., Rubio Verdú, Carmen, Ruta, Francesco L., Cothrine, Matthew, Yan, Jiaqiang, Mandrus, David G., Nagler, Stephen E., Rubio Secades, Angel, Hone, James, Dean, Cory R., Pasupathy, Abhay N., Basov, Dmitri N.
Tipo de documento: artigo
Data de publicação:2022
País:España
Recursos:Universidad del País Vasco
Repositório:Addi. Archivo Digital para la Docencia y la Investigación
OAI Identifier:oai:addi.ehu.eus:10810/56737
Acesso em linha:http://hdl.handle.net/10810/56737
Access Level:Acceso aberto
Palavra-chave:scanning tunneling microscopy
scanning tunneling spectroscopy
scanning near-field optical microscopy
plasmons
two-dimensional materials
charge transfer
Descrição
Resumo:[EN] The ability to create nanometer-scale lateral p-n junctions is essential for the next generation of two-dimensional (2D) devices. Using the charge-transfer heterostructure graphene/alpha-RuCl3, we realize nanoscale lateral p-n junctions in the vicinity of graphene nanobubbles. Our multipronged experimental approach incorporates scanning tunneling microscopy (STM) and spectroscopy (STS) and scattering-type scanning near-field optical microscopy (s-SNOM) to simultaneously probe the electronic and optical responses of nanobubble p-n junctions. Our STM/STS results reveal that p-n junctions with a band offset of 0.6 eV can be achieved with widths of 3 nm, giving rise to electric fields of order 108 V/m. Concurrent s-SNOM measurements validate a point-scatterer formalism for modeling the interaction of surface plasmon polaritons (SPPs) with nanobubbles. Ab initio density functional theory (DFT) calculations corroborate our experimental data and reveal the dependence of charge transfer on layer separation. Our study provides experimental and conceptual foundations for generating p-n nanojunctions in 2D materials.

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