Nanometer-Scale Lateral p–n Junctions in Graphene/α-RuCl3 Heterostructures

[EN] The ability to create nanometer-scale lateral p-n junctions is essential for the next generation of two-dimensional (2D) devices. Using the charge-transfer heterostructure graphene/alpha-RuCl3, we realize nanoscale lateral p-n junctions in the vicinity of graphene nanobubbles. Our multipronged...

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Detalles Bibliográficos
Autores: Rizzo, Daniel J., Shabani, Sara, Jessen, Bjarke S., Zhang, Jin, McLeod, Alexander S., Rubio Verdú, Carmen, Ruta, Francesco L., Cothrine, Matthew, Yan, Jiaqiang, Mandrus, David G., Nagler, Stephen E., Rubio Secades, Angel, Hone, James, Dean, Cory R., Pasupathy, Abhay N., Basov, Dmitri N.
Tipo de recurso: artículo
Fecha de publicación:2022
País:España
Institución:Universidad del País Vasco
Repositorio:Addi. Archivo Digital para la Docencia y la Investigación
OAI Identifier:oai:addi.ehu.eus:10810/56737
Acceso en línea:http://hdl.handle.net/10810/56737
Access Level:acceso abierto
Palabra clave:scanning tunneling microscopy
scanning tunneling spectroscopy
scanning near-field optical microscopy
plasmons
two-dimensional materials
charge transfer
Descripción
Sumario:[EN] The ability to create nanometer-scale lateral p-n junctions is essential for the next generation of two-dimensional (2D) devices. Using the charge-transfer heterostructure graphene/alpha-RuCl3, we realize nanoscale lateral p-n junctions in the vicinity of graphene nanobubbles. Our multipronged experimental approach incorporates scanning tunneling microscopy (STM) and spectroscopy (STS) and scattering-type scanning near-field optical microscopy (s-SNOM) to simultaneously probe the electronic and optical responses of nanobubble p-n junctions. Our STM/STS results reveal that p-n junctions with a band offset of 0.6 eV can be achieved with widths of 3 nm, giving rise to electric fields of order 108 V/m. Concurrent s-SNOM measurements validate a point-scatterer formalism for modeling the interaction of surface plasmon polaritons (SPPs) with nanobubbles. Ab initio density functional theory (DFT) calculations corroborate our experimental data and reveal the dependence of charge transfer on layer separation. Our study provides experimental and conceptual foundations for generating p-n nanojunctions in 2D materials.

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