Supporting Information for Spin Hall magnetoresistance effect from a disordered interface

ADMR and FDMR of the control sample consisting of TaOx/Cu/Ti/MnPSe3; ADMR measured in the transversal configuration in the α plane, at T = 50, 90, and 150 K; FDMR measured in the transversal configuration in the α plane at T = 50 K and T = 90 K; TEM cross-section and EDX profile of a measured device...

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Detalles Bibliográficos
Autores: Catalano, Sara, Gomez-Perez, Juan M., Xochitl Aguilar-Pujol, M., Chuvilin, Andrey, Gobbi, Marco, Hueso, Luis E., Casanova, Félix
Tipo de recurso: conjunto de datos
Fecha de publicación:2022
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/310411
Acceso en línea:http://hdl.handle.net/10261/310411
Access Level:acceso abierto
Palabra clave:Spintronics
Interfaces
2D materials
Spin hall magnetoresistance
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spelling Supporting Information for Spin Hall magnetoresistance effect from a disordered interfaceCatalano, SaraGomez-Perez, Juan M.Xochitl Aguilar-Pujol, M.Chuvilin, AndreyGobbi, MarcoHueso, Luis E.Casanova, FélixSpintronicsInterfaces2D materialsSpin hall magnetoresistanceADMR and FDMR of the control sample consisting of TaOx/Cu/Ti/MnPSe3; ADMR measured in the transversal configuration in the α plane, at T = 50, 90, and 150 K; FDMR measured in the transversal configuration in the α plane at T = 50 K and T = 90 K; TEM cross-section and EDX profile of a measured device; and discussion of the HMR mechanism (PDF).Peer reviewedAmerican Chemical SocietyConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202320232022info:eu-repo/semantics/datasethttp://purl.org/coar/resource_type/c_ddb1application/pdfhttp://hdl.handle.net/10261/310411reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)InglésCatalano, Sara; Gomez-Perez, Juan M.; Xochitl Aguilar-Pujol, M.; Chuvilin, Andrey; Gobbi, Marco; Hueso, Luis E.; Casanova, Félix; 2022; Spin Hall magnetoresistance effect from a disordered interface; https://doi.org/10.1021/acsami.1c23411; http://hdl.handle.net/10261/275214Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3104112026-05-22T06:33:51Z
dc.title.none.fl_str_mv Supporting Information for Spin Hall magnetoresistance effect from a disordered interface
title Supporting Information for Spin Hall magnetoresistance effect from a disordered interface
spellingShingle Supporting Information for Spin Hall magnetoresistance effect from a disordered interface
Catalano, Sara
Spintronics
Interfaces
2D materials
Spin hall magnetoresistance
title_short Supporting Information for Spin Hall magnetoresistance effect from a disordered interface
title_full Supporting Information for Spin Hall magnetoresistance effect from a disordered interface
title_fullStr Supporting Information for Spin Hall magnetoresistance effect from a disordered interface
title_full_unstemmed Supporting Information for Spin Hall magnetoresistance effect from a disordered interface
title_sort Supporting Information for Spin Hall magnetoresistance effect from a disordered interface
dc.creator.none.fl_str_mv Catalano, Sara
Gomez-Perez, Juan M.
Xochitl Aguilar-Pujol, M.
Chuvilin, Andrey
Gobbi, Marco
Hueso, Luis E.
Casanova, Félix
author Catalano, Sara
author_facet Catalano, Sara
Gomez-Perez, Juan M.
Xochitl Aguilar-Pujol, M.
Chuvilin, Andrey
Gobbi, Marco
Hueso, Luis E.
Casanova, Félix
author_role author
author2 Gomez-Perez, Juan M.
Xochitl Aguilar-Pujol, M.
Chuvilin, Andrey
Gobbi, Marco
Hueso, Luis E.
Casanova, Félix
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Spintronics
Interfaces
2D materials
Spin hall magnetoresistance
topic Spintronics
Interfaces
2D materials
Spin hall magnetoresistance
description ADMR and FDMR of the control sample consisting of TaOx/Cu/Ti/MnPSe3; ADMR measured in the transversal configuration in the α plane, at T = 50, 90, and 150 K; FDMR measured in the transversal configuration in the α plane at T = 50 K and T = 90 K; TEM cross-section and EDX profile of a measured device; and discussion of the HMR mechanism (PDF).
publishDate 2022
dc.date.none.fl_str_mv 2022
2023
2023
dc.type.none.fl_str_mv info:eu-repo/semantics/dataset
http://purl.org/coar/resource_type/c_ddb1
format dataset
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/310411
url http://hdl.handle.net/10261/310411
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Catalano, Sara; Gomez-Perez, Juan M.; Xochitl Aguilar-Pujol, M.; Chuvilin, Andrey; Gobbi, Marco; Hueso, Luis E.; Casanova, Félix; 2022; Spin Hall magnetoresistance effect from a disordered interface; https://doi.org/10.1021/acsami.1c23411; http://hdl.handle.net/10261/275214
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Chemical Society
publisher.none.fl_str_mv American Chemical Society
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.812429

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