Supporting Information for Spin Hall magnetoresistance effect from a disordered interface
ADMR and FDMR of the control sample consisting of TaOx/Cu/Ti/MnPSe3; ADMR measured in the transversal configuration in the α plane, at T = 50, 90, and 150 K; FDMR measured in the transversal configuration in the α plane at T = 50 K and T = 90 K; TEM cross-section and EDX profile of a measured device...
| Autores: | , , , , , , |
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| Tipo de recurso: | conjunto de datos |
| Fecha de publicación: | 2022 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/310411 |
| Acceso en línea: | http://hdl.handle.net/10261/310411 |
| Access Level: | acceso abierto |
| Palabra clave: | Spintronics Interfaces 2D materials Spin hall magnetoresistance |
| Sumario: | ADMR and FDMR of the control sample consisting of TaOx/Cu/Ti/MnPSe3; ADMR measured in the transversal configuration in the α plane, at T = 50, 90, and 150 K; FDMR measured in the transversal configuration in the α plane at T = 50 K and T = 90 K; TEM cross-section and EDX profile of a measured device; and discussion of the HMR mechanism (PDF). |
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