Inherent Uncertainty in the Determination of Multiple Event Cross Sections in Radiation Tests
In radiation tests on SRAMs or FPGAs, two or more independent bitflips can be misled with a multiple event if they accidentally occur in neighbor cells. In the past, different tests such as the ``birthday statistics'' have been proposed to estimate the accuracy of the experimental results....
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2020 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/6087 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/6087 |
| Access Level: | acceso abierto |
| Palabra clave: | Birtdhay Statistics FPGA SEU SRAM Electrónica (Física) Radiactividad Circuitos integrados Electrónica (Informática) 2203.07 Circuitos Integrados 2203 Electrónica |
| Sumario: | In radiation tests on SRAMs or FPGAs, two or more independent bitflips can be misled with a multiple event if they accidentally occur in neighbor cells. In the past, different tests such as the ``birthday statistics'' have been proposed to estimate the accuracy of the experimental results. In this paper, simple formulae are proposed to determine the expected number of false 2-bit and 3-bit MCUs from the number of bitflips, memory size and the method used to search multiple events. These expressions are validated using Monte Carlo simulations and experimental data. Also, a technique is proposed to refine experimental data and thus partially removing possible false events. Finally, it is demonstrated that there is a physical limit to determine the cross section of memories with arbitrary accuracy from a single experiment. |
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