Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires

[EN] Crystal phase quantum dots (QDs) are formed during the axial growth of III-V semiconductor nanowires (NWs) by stacking different crystal phases of the same material. In III¿V semiconductor NWs, both zinc blende (ZB) and wurtzite (WZ) crystal phases can coexist. The band structure difference bet...

Descripción completa

Detalles Bibliográficos
Autores: Sinusia-Lozano, Miguel|||0000-0002-1744-4148, Gómez-Hernández, Víctor Jesús|||0000-0003-2364-8814
Tipo de recurso: artículo
Fecha de publicación:2023
País:España
Institución:Universitat Politècnica de València (UPV)
Repositorio:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
Idioma:inglés
OAI Identifier:oai:riunet.upv.es:10251/205209
Acceso en línea:https://riunet.upv.es/handle/10251/205209
Access Level:acceso abierto
Palabra clave:Epitaxy
Nanowires
III-V semiconductors
Quantum dots
id ES_a6c2b748a6e1f00331fbd0dabea604b3
oai_identifier_str oai:riunet.upv.es:10251/205209
network_acronym_str ES
network_name_str España
repository_id_str
spelling Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowiresSinusia-Lozano, Miguel|||0000-0002-1744-4148Gómez-Hernández, Víctor Jesús|||0000-0003-2364-8814EpitaxyNanowiresIII-V semiconductorsQuantum dots[EN] Crystal phase quantum dots (QDs) are formed during the axial growth of III-V semiconductor nanowires (NWs) by stacking different crystal phases of the same material. In III¿V semiconductor NWs, both zinc blende (ZB) and wurtzite (WZ) crystal phases can coexist. The band structure difference between both crystal phases can lead to quantum confinement. Thanks to the precise control in III¿V semiconductor NW growth conditions and the deep knowledge on the epitaxial growth mechanisms, it is nowadays possible to control, down to the atomic level, the switching between crystal phases in NWs forming the so-called crystal phase NW-based QDs (NWQDs). The shape and size of the NW bridge the gap between QDs and the macroscopic world. This review is focused on crystal phase NWQDs based on III¿V NWs obtained by the bottom-up vapor¿liquid¿solid (VLS) method and their optical and electronic properties. Crystal phase switching can be achieved in the axial direction. In contrast, in the core/shell growth, the difference in surface energies between different polytypes can enable selective shell growth. One reason for the very intense research in this field is motivated by their excellent optical and electronic properties both appealing for applications in nanophotonics and quantum technologies.The authors acknowledge financial support from the Generalitat Valenciana (Projects: COMCUANTICA/003, CIAPOS/2021/293, and CDEIGENT/2020/009).Royal Society of ChemistryDepartamento de Física AplicadaEscuela Técnica Superior de Ingeniería de TelecomunicaciónInstituto Universitario de Tecnología NanofotónicaGENERALITAT VALENCIANAUniversitat Politècnica de ValènciaCentre for Forestry Research and ExperimentationRepositorio Institucional de la Universitat Politècnica de València Riunet20232023-03-28journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://riunet.upv.es/handle/10251/205209reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valénciainstname:Universitat Politècnica de València (UPV)InglésengGeneralitat Valenciana https://doi.org/10.13039/501100003359 CDEIGENT%2F2020%2F009 ADVANCED NANO-PHOTONIC DEVICES BASED ON PLASMONIC METAMARIALSGeneralitat Valenciana https://doi.org/10.13039/501100003359 COMCUANTICA%2F003 Desarrollo de cirCUitos fotónicos cuánticos integrados basados en Puntos cuántIcos e híbriDOs semiconductores III-V y Silicio a nivel de obleaGeneralitat Valenciana https://doi.org/10.13039/501100003359 CIAPOS%2F2021%2F293 GaN NAnowiREs for sensing with light (GANARE)open accesshttp://purl.org/coar/access_right/c_abf2Reconocimiento (by)http://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:riunet.upv.es:10251/2052092026-06-13T07:49:27Z
dc.title.none.fl_str_mv Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires
title Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires
spellingShingle Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires
Sinusia-Lozano, Miguel|||0000-0002-1744-4148
Epitaxy
Nanowires
III-V semiconductors
Quantum dots
title_short Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires
title_full Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires
title_fullStr Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires
title_full_unstemmed Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires
title_sort Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires
dc.creator.none.fl_str_mv Sinusia-Lozano, Miguel|||0000-0002-1744-4148
Gómez-Hernández, Víctor Jesús|||0000-0003-2364-8814
author Sinusia-Lozano, Miguel|||0000-0002-1744-4148
author_facet Sinusia-Lozano, Miguel|||0000-0002-1744-4148
Gómez-Hernández, Víctor Jesús|||0000-0003-2364-8814
author_role author
author2 Gómez-Hernández, Víctor Jesús|||0000-0003-2364-8814
author2_role author
dc.contributor.none.fl_str_mv Departamento de Física Aplicada
Escuela Técnica Superior de Ingeniería de Telecomunicación
Instituto Universitario de Tecnología Nanofotónica
GENERALITAT VALENCIANA
Universitat Politècnica de València
Centre for Forestry Research and Experimentation
Repositorio Institucional de la Universitat Politècnica de València Riunet
dc.subject.none.fl_str_mv Epitaxy
Nanowires
III-V semiconductors
Quantum dots
topic Epitaxy
Nanowires
III-V semiconductors
Quantum dots
description [EN] Crystal phase quantum dots (QDs) are formed during the axial growth of III-V semiconductor nanowires (NWs) by stacking different crystal phases of the same material. In III¿V semiconductor NWs, both zinc blende (ZB) and wurtzite (WZ) crystal phases can coexist. The band structure difference between both crystal phases can lead to quantum confinement. Thanks to the precise control in III¿V semiconductor NW growth conditions and the deep knowledge on the epitaxial growth mechanisms, it is nowadays possible to control, down to the atomic level, the switching between crystal phases in NWs forming the so-called crystal phase NW-based QDs (NWQDs). The shape and size of the NW bridge the gap between QDs and the macroscopic world. This review is focused on crystal phase NWQDs based on III¿V NWs obtained by the bottom-up vapor¿liquid¿solid (VLS) method and their optical and electronic properties. Crystal phase switching can be achieved in the axial direction. In contrast, in the core/shell growth, the difference in surface energies between different polytypes can enable selective shell growth. One reason for the very intense research in this field is motivated by their excellent optical and electronic properties both appealing for applications in nanophotonics and quantum technologies.
publishDate 2023
dc.date.none.fl_str_mv 2023
2023-03-28
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://riunet.upv.es/handle/10251/205209
url https://riunet.upv.es/handle/10251/205209
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Generalitat Valenciana https://doi.org/10.13039/501100003359 CDEIGENT%2F2020%2F009 ADVANCED NANO-PHOTONIC DEVICES BASED ON PLASMONIC METAMARIALS
Generalitat Valenciana https://doi.org/10.13039/501100003359 COMCUANTICA%2F003 Desarrollo de cirCUitos fotónicos cuánticos integrados basados en Puntos cuántIcos e híbriDOs semiconductores III-V y Silicio a nivel de oblea
Generalitat Valenciana https://doi.org/10.13039/501100003359 CIAPOS%2F2021%2F293 GaN NAnowiREs for sensing with light (GANARE)
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reconocimiento (by)
http://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reconocimiento (by)
http://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Royal Society of Chemistry
publisher.none.fl_str_mv Royal Society of Chemistry
dc.source.none.fl_str_mv reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname:Universitat Politècnica de València (UPV)
instname_str Universitat Politècnica de València (UPV)
reponame_str RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
collection RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869415723620630528
score 15,811543

Similares en LA Referencia