Toward the absolute spin-valve effect in superconducting tunnel junctions
A superconductor with a spin-split excitation spectrum behaves as an ideal ferromagnetic spin-injector in a tunneling junction. It was theoretically predicted that the combination of two such spin-split superconductors with independently tunable magnetizations may be used as an ideal absolute spin-v...
| Autores: | , , , , |
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| Formato: | artículo |
| Estado: | Versión enviada para evaluación y publicación |
| Fecha de publicación: | 2018 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/178470 |
| Acesso em linha: | http://hdl.handle.net/10261/178470 |
| Access Level: | acceso abierto |
| Palavra-chave: | Ferromagnetic insulator Magnetic memories Spin valve Spintronics Superconductivity Tunneling magneto-resistance |
| Resumo: | A superconductor with a spin-split excitation spectrum behaves as an ideal ferromagnetic spin-injector in a tunneling junction. It was theoretically predicted that the combination of two such spin-split superconductors with independently tunable magnetizations may be used as an ideal absolute spin-valve. Here, we report on the first switchable superconducting spin-valve based on two EuS/Al bilayers coupled through an aluminum oxide tunnel barrier. The spin-valve shows a relative resistance change between the parallel and antiparallel configuration of the EuS layers up to 900% that demonstrates a highly spin-polarized current through the junction. Our device may be pivotal for realization of thermoelectric radiation detectors, a logical element for a memory cell in cryogenics, superconductor-based computers, and superconducting spintronics in general. |
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