Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling

In this paper, we demonstrate that in Ta/MgO/IrMn tunneling junctions, containing no ferromagnetic elements, distinct metastable resistance states can be set by field cooling the devices from above the Néel temperature (TN) along different orientations. Variations of the resistance up to 10% are fou...

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Detalles Bibliográficos
Autores: Petti, Daniela|||0000-0002-9273-1884, Albisetti, Edoardo|||0000-0002-8134-0482, Reichlová, Helena, Gázquez Alabart, Jaume|||0000-0002-2561-328X, Varela del Arco, María|||0000-0002-6582-7004, Molina Ruiz, Manel|||0000-0003-4892-3042, Lopeandia, Aitor|||0000-0003-0566-8299, Olejník, Kamil|||0000-0002-1023-0358, Novák, Vít, Fina, Ignasi|||0000-0003-4182-6194, Dkhil, Brahim|||0000-0002-9862-625X, Hayakawa, Jun, Marti, Xavier, Wunderlich, Jöerg, Jungwirth, Tomas|||0000-0002-9910-1674, Bertacco, Riccardo|||0000-0002-8109-9166
Tipo de recurso: artículo
Fecha de publicación:2013
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:115962
Acceso en línea:https://ddd.uab.cat/record/115962
https://dx.doi.org/urn:doi:10.1063/1.4804429
Access Level:acceso abierto
Palabra clave:Antiferromagnetism
Tunneling
Magnetic fields
Atomic force microscopy
Ferromagnetism
Magnetic tunnel junctions
Descripción
Sumario:In this paper, we demonstrate that in Ta/MgO/IrMn tunneling junctions, containing no ferromagnetic elements, distinct metastable resistance states can be set by field cooling the devices from above the Néel temperature (TN) along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields, in-plane or out-of-plane. Well below TN, these metastable states are insensitive to magnetic fields up to 2 T, thus constituting robust memory states. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer.

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