The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layer

Cu2ZnSn(SxSe1−x)4 (CZTSSe) photovoltaic absorbers could be the earth-abundant and low toxicity replacement for the already commercialized CuIn1−xGaxSe2 (CIGS) thin film technology. In order to make this possible, specific research efforts applied to the bulk, front and back interfaces must be perfor...

Full description

Bibliographic Details
Authors: López-Marino, Simon, Espindola Rodriguez, Moises, Sánchez González, Yudania, Alcobé i Ollé, Xavier, Oliva Cuyàs, Francesc, Xie, Haibing, Neuschitzer, Markus, Giraldo Muñoz, Sergio, Placidi, Marcel, Caballero, Raquel, Izquierdo Roca, Victor, Pérez Rodríguez, Alejandro, Saucedo Silva, Edgardo
Format: article
Status:Versión aceptada para publicación
Publication Date:2016
Country:España
Institution:Universidad de Barcelona
Repository:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/128476
Online Access:https://hdl.handle.net/2445/128476
Access Level:Open access
Keyword:Cèl·lules solars
Pel·lícules fines
Fotoelectricitat
Espectroscòpia Raman
Solar cells
Thin films
Photoelectricity
Raman spectroscopy
id ES_a57495a0955871e3ece6d71bcdf0875e
oai_identifier_str oai:diposit.ub.edu:2445/128476
network_acronym_str ES
network_name_str España
repository_id_str
spelling The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layerLópez-Marino, SimonEspindola Rodriguez, MoisesSánchez González, YudaniaAlcobé i Ollé, XavierOliva Cuyàs, FrancescXie, HaibingNeuschitzer, MarkusGiraldo Muñoz, SergioPlacidi, MarcelCaballero, RaquelIzquierdo Roca, VictorPérez Rodríguez, AlejandroSaucedo Silva, EdgardoCèl·lules solarsPel·lícules finesFotoelectricitatEspectroscòpia RamanSolar cellsThin filmsPhotoelectricityRaman spectroscopyCu2ZnSn(SxSe1−x)4 (CZTSSe) photovoltaic absorbers could be the earth-abundant and low toxicity replacement for the already commercialized CuIn1−xGaxSe2 (CIGS) thin film technology. In order to make this possible, specific research efforts applied to the bulk, front and back interfaces must be performed with the aim of improving CZTSSe performance. In this paper the importance of back contact modification to obtain high efficiency Cu2ZnSnSe4 (CZTSe) solar cells and to increase a paramount and limiting parameter such as VOC is highlighted. Several Mo configurations (monolayer, bi-layer and tri-layer) with different electrical and morphological properties are investigated in CZTSe solar cells. An optimum tri-layer configuration in order to minimize overselenization of the back contact during thermal annealing while keeping reasonable electrical features is defined. Additionally, a thin intermediate MoO2 layer that results in a very effective barrier against selenization and innovative way to efficiently assist in the CZTSe absorber sintering is introduced. The use of this layer enhances grain growth and subsequently the efficiency of solar cells increases via major VOC and FF improvement. An efficiency increase from 7.2% to 9.5% is obtained using a Mo tri-layer with a 20nm intermediate MoO2 layer.Elsevier2016info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttps://hdl.handle.net/2445/128476Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésVersió postprint del document publicat a: https://doi.org/10.1016/j.nanoen.2016.06.034Nano Energy, 2016, vol. 26, p. 708-721https://doi.org/10.1016/j.nanoen.2016.06.034info:eu-repo/grantAgreement/EC/FP7/316488cc-by-nc-nd (c) Elsevier, 2016http://creativecommons.org/licenses/by-nc-nd/3.0/esinfo:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/1284762026-05-27T06:46:51Z
dc.title.none.fl_str_mv The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layer
title The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layer
spellingShingle The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layer
López-Marino, Simon
Cèl·lules solars
Pel·lícules fines
Fotoelectricitat
Espectroscòpia Raman
Solar cells
Thin films
Photoelectricity
Raman spectroscopy
title_short The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layer
title_full The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layer
title_fullStr The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layer
title_full_unstemmed The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layer
title_sort The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layer
dc.creator.none.fl_str_mv López-Marino, Simon
Espindola Rodriguez, Moises
Sánchez González, Yudania
Alcobé i Ollé, Xavier
Oliva Cuyàs, Francesc
Xie, Haibing
Neuschitzer, Markus
Giraldo Muñoz, Sergio
Placidi, Marcel
Caballero, Raquel
Izquierdo Roca, Victor
Pérez Rodríguez, Alejandro
Saucedo Silva, Edgardo
author López-Marino, Simon
author_facet López-Marino, Simon
Espindola Rodriguez, Moises
Sánchez González, Yudania
Alcobé i Ollé, Xavier
Oliva Cuyàs, Francesc
Xie, Haibing
Neuschitzer, Markus
Giraldo Muñoz, Sergio
Placidi, Marcel
Caballero, Raquel
Izquierdo Roca, Victor
Pérez Rodríguez, Alejandro
Saucedo Silva, Edgardo
author_role author
author2 Espindola Rodriguez, Moises
Sánchez González, Yudania
Alcobé i Ollé, Xavier
Oliva Cuyàs, Francesc
Xie, Haibing
Neuschitzer, Markus
Giraldo Muñoz, Sergio
Placidi, Marcel
Caballero, Raquel
Izquierdo Roca, Victor
Pérez Rodríguez, Alejandro
Saucedo Silva, Edgardo
author2_role author
author
author
author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Cèl·lules solars
Pel·lícules fines
Fotoelectricitat
Espectroscòpia Raman
Solar cells
Thin films
Photoelectricity
Raman spectroscopy
topic Cèl·lules solars
Pel·lícules fines
Fotoelectricitat
Espectroscòpia Raman
Solar cells
Thin films
Photoelectricity
Raman spectroscopy
description Cu2ZnSn(SxSe1−x)4 (CZTSSe) photovoltaic absorbers could be the earth-abundant and low toxicity replacement for the already commercialized CuIn1−xGaxSe2 (CIGS) thin film technology. In order to make this possible, specific research efforts applied to the bulk, front and back interfaces must be performed with the aim of improving CZTSSe performance. In this paper the importance of back contact modification to obtain high efficiency Cu2ZnSnSe4 (CZTSe) solar cells and to increase a paramount and limiting parameter such as VOC is highlighted. Several Mo configurations (monolayer, bi-layer and tri-layer) with different electrical and morphological properties are investigated in CZTSe solar cells. An optimum tri-layer configuration in order to minimize overselenization of the back contact during thermal annealing while keeping reasonable electrical features is defined. Additionally, a thin intermediate MoO2 layer that results in a very effective barrier against selenization and innovative way to efficiently assist in the CZTSe absorber sintering is introduced. The use of this layer enhances grain growth and subsequently the efficiency of solar cells increases via major VOC and FF improvement. An efficiency increase from 7.2% to 9.5% is obtained using a Mo tri-layer with a 20nm intermediate MoO2 layer.
publishDate 2016
dc.date.none.fl_str_mv 2016
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/128476
url https://hdl.handle.net/2445/128476
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: https://doi.org/10.1016/j.nanoen.2016.06.034
Nano Energy, 2016, vol. 26, p. 708-721
https://doi.org/10.1016/j.nanoen.2016.06.034
info:eu-repo/grantAgreement/EC/FP7/316488
dc.rights.none.fl_str_mv cc-by-nc-nd (c) Elsevier, 2016
http://creativecommons.org/licenses/by-nc-nd/3.0/es
info:eu-repo/semantics/openAccess
rights_invalid_str_mv cc-by-nc-nd (c) Elsevier, 2016
http://creativecommons.org/licenses/by-nc-nd/3.0/es
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869415616484474880
score 15,301603

Similar Items