Towards high performance Cd-free CZTSe solar cells with a ZnS(O,OH) buffer layer: the influence of thiourea concentration on chemical bath deposition cells

High performance kesterite (CZTSe) based solar cell devices usually employ an absorber/buffer heterostructure using toxic CdS deposited by chemical bath deposition (CBD)as buffer layer. This is due to the favourable spike like conduction band alignment of CdS buffer and CZTSe absorber. ZnS(O,OH) buf...

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Detalles Bibliográficos
Autores: Neuschitzer, Markus, Lienau, K., Guc, Maxim, Calvo Barrio, Lorenzo, Haass, Stefan, Marquez Prieto, Jose, Sánchez González, Yudania, Espindola Rodriguez, Moises, Romanyuk, Yaroslav, Pérez Rodríguez, Alejandro, Izquierdo Roca, Victor, Saucedo Silva, Edgardo
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2016
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/128049
Acceso en línea:https://hdl.handle.net/2445/128049
Access Level:acceso abierto
Palabra clave:Pel·lícules fines
Cèl·lules solars
Fotoelectricitat
Thin films
Solar cells
Photoelectricity
Descripción
Sumario:High performance kesterite (CZTSe) based solar cell devices usually employ an absorber/buffer heterostructure using toxic CdS deposited by chemical bath deposition (CBD)as buffer layer. This is due to the favourable spike like conduction band alignment of CdS buffer and CZTSe absorber. ZnS(O,OH) buffer layers provide a promising nontoxic alternative. Here, a variation of the thiourea concentration in the CBD of ZnS(O,OH) buffer layers and its influence on device performances of pure selenide kesterite heterostructure solar cells is presented. Furthermore, the influence of buffer layer deposition conditions on light induces metastabilities are discussed. ZnS(O,OH) buffer deposited with high thiourea concentration leads to distorted illuminated JV curves as expected for devices with unfavourable high spike like conduction band alignment between buffer and CZTSe absorber. By adjusting the thiourea concentration JV curve distortions can be reduced. An optimized CBD process leads to device efficiency of up to 6.5% after light soaking which is comparable to the efficiency of a reference device employing CdS as buffer layer (6.9%).

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