CMOS BEOL-embedded z-axis accelerometer
A first reported complementary metal-oxide semiconductor (CMOS)-integrated acceleration sensor obtained through isotropic inter-metal dielectric (IMD) etching of a back-end-of-line (BEOL) integrated circuit interconnection stack, without any additional substrate etching steps, is presented. The mech...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2015 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/84998 |
| Acceso en línea: | https://hdl.handle.net/2117/84998 https://dx.doi.org/10.1049/el.2015.0140 |
| Access Level: | acceso abierto |
| Palabra clave: | Electric engineering Electrònica -- Aparells i instruments Aceleròmetres Àrees temàtiques de la UPC::Enginyeria electrònica |
| Sumario: | A first reported complementary metal-oxide semiconductor (CMOS)-integrated acceleration sensor obtained through isotropic inter-metal dielectric (IMD) etching of a back-end-of-line (BEOL) integrated circuit interconnection stack, without any additional substrate etching steps, is presented. The mechanical device composed of a CMOS-process 8 mu m-thick metal-via-metal stack of 135 mu m diameter and suspended 2.5 mu m over a bottom fixed electrode, has a resonance frequency of 20 kHz, a sensing capacitance of 50 fF with sensitivity 14 aF/G and it is integrated on the same substrate with a simple low-noise amplifier reaching 25 mG of RMS noise measured from 0.25 to 100 Hz bandwidth. |
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