MOST moderate-weak-inversion region as the optimum design zone for CMOS 2.4-GHz CS-LNAs
In this paper, the MOS transistor (MOST) moderate-inversion (MI)-weak-inversion (WI) region is shown to be the optimum design zone for CMOS 2.4-GHz common-source low-noise amplifiers (CS-LNAs) focused on low power consumption applications. This statement is supported by a systematic study where the...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión enviada para evaluación y publicación |
| Fecha de publicación: | 2014 |
| País: | España |
| Institución: | Universidad de Sevilla (US) |
| Repositorio: | idUS. Depósito de Investigación de la Universidad de Sevilla |
| OAI Identifier: | oai:idus.us.es:11441/74867 |
| Acceso en línea: | https://hdl.handle.net/11441/74867 https://doi.org/10.1109/TMTT.2014.2303476 |
| Access Level: | acceso abierto |
| Palabra clave: | Low power Gm/ID Optimization Weak inversion noise figure Design methodology Pareto optimal Moderate inversion CS-LNA |
| Sumario: | In this paper, the MOS transistor (MOST) moderate-inversion (MI)-weak-inversion (WI) region is shown to be the optimum design zone for CMOS 2.4-GHz common-source low-noise amplifiers (CS-LNAs) focused on low power consumption applications. This statement is supported by a systematic study where the MOST is analyzed in all-inversion regions using an exhaustive CS-LNA noise-figure (NF)-power-consumption optimization technique with power gain constraint. Effects of bias choke resistance and MOST capacitances are carefully included in the study to obtain more accurate results, especially for the MI-WI region. NF, power consumption, and gain versus the inversion region are described with design space maps, providing the designer with a deep insight of their tradeoffs. The Pareto-optimal design frontier obtained by calculation-showing the MI-WI region as the optimum design zone-is reverified by extensive electrical simulations of a high number of designs. Finally, one 90-nm 2.4-GHz CS-LNA Pareto optimal design is implemented. It achieves the best figure of merit considering under-milliwatt CS-LNAs published designs, consuming 684 μW, an NF of 4.36 dB, a power gain of 9.7 dB, and a third-order intermodulation intercept point of-4 dBm with load and source resistances of 50 Ω. |
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