Defect investigation in irradiated ATLAS18 ITk Strip Sensors using transient spectroscopy techniques

With the upgrade of the LHC to the High-Luminosity LHC (HL-LHC), the Inner Detector will be replaced with the new all-silicon ATLAS Inner Tracker (ITk). Comprising an active area of 165m<sup>2</sup>, the outer detector layers will host strip modules, built with single-sided micro-strip s...

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Detalhes bibliográficos
Autores: Klein, C. T., Cindro, V., Dandoy, J., Fadeyev, V., Federičová, P., Jessiman, C., Keller, J. S., Koffas, T., Kroll, J., Kvasnička, J., Mandić, I., Mikeštíková, M., Staats, E., Ullán Comes, Miguel, Unno, Y., Zhao, Y.
Tipo de documento: artigo
Estado:Versão publicada
Data de publicação:2025
País:España
Recursos:Consejo Superior de Investigaciones Científicas (CSIC)
Repositório:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/420673
Acesso em linha:http://hdl.handle.net/10261/420673
https://api.elsevier.com/content/abstract/scopus_id/105008215293
Access Level:Acceso aberto
Palavra-chave:ATLAS
DLTS
HL-LHC
ITk
http://metadata.un.org/sdg/9
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Descrição
Resumo:With the upgrade of the LHC to the High-Luminosity LHC (HL-LHC), the Inner Detector will be replaced with the new all-silicon ATLAS Inner Tracker (ITk). Comprising an active area of 165m<sup>2</sup>, the outer detector layers will host strip modules, built with single-sided micro-strip sensors. The ATLAS18 main sensors were tested at different institutes in the collaboration for mechanical and electrical compliance with technical specifications, while technological parameters were verified on test structures from the same wafers before and after irradiation. Diodes fabricated as test structures were studied using variants of Deep-Level Transient Spectroscopy (DLTS). Irradiated diode samples were measured with Current-DLTS, using both electrical and photo-induced injection. Utilizing DLTS spectra with varying test parameters, trap energy levels and cross-sections associated with defects were obtained. This was done to improve the precision of sensor simulations as well as to compile a more complete model of radiation damage in ITk Strip Sensors. Moreover, previously observed features such as an increasing trend in the full depletion voltage after irradiation and little beneficial annealing in charge collection after high fluence irradiation of high energy protons were also investigated. Results obtained for samples with radiation damage from different sources at various fluences were compared.

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