Preliminary defect level investigation in ATLAS ITk Strip Sensors using DLTS
As a part of ongoing studies in parallel to ITk Strip Sensor Production quality control (QC) and quality assurance (QA), diodes fabricated as test structures were measured using Deep-Level Transient Spectroscopy (DLTS). This was done to understand an anomalously large leakage current observed in mai...
| Authors: | , , , , , , , , , , , , , |
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| Format: | article |
| Status: | Published version |
| Publication Date: | 2024 |
| Country: | España |
| Institution: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repository: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/396481 |
| Online Access: | http://hdl.handle.net/10261/396481 https://api.elsevier.com/content/abstract/scopus_id/85197347651 |
| Access Level: | Open access |
| Keyword: | ATLAS | DLTS | HL-LHC | ITk http://metadata.un.org/sdg/9 Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation |
| Summary: | As a part of ongoing studies in parallel to ITk Strip Sensor Production quality control (QC) and quality assurance (QA), diodes fabricated as test structures were measured using Deep-Level Transient Spectroscopy (DLTS). This was done to understand an anomalously large leakage current observed in main sensors, and to improve the precision of sensor simulations as well as to compile a more complete model of radiation damage in ITk Strip Sensors. Utilising DLTS spectra with varying test parameters, trap energy levels and cross-sections associated with defects in the devices were obtained. Furthermore, employing related measurements techniques, such as Thermal Admittance Spectroscopy (TAS), results were supplemented and expanded, or additional points of interest, such as the deep level profile and the capture kinematics of the trap levels, were investigated with double-pulse DLTS (DDLTS). A common trap in unirradiated diodes was identified, but also an additional trap suspected to cause high leakage current. In proton-irradiated diodes, defects common to all devices irrespective of fluence level were observed. |
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