Polycrystalline WO3−x Thin Films Obtained by Reactive DC Sputtering at Room Temperature

Tungsten oxide thin films have applications in various energy-related devices owing to their versatile semiconductor properties, which depend on the oxygen content and crystalline state. The concentration of electrons increases with intrinsic defects such as oxygen vacancies, which create new absorp...

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Detalles Bibliográficos
Autor: Guillén Arqueros, Cecilia
Tipo de recurso: artículo
Fecha de publicación:2023
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/103525
Acceso en línea:https://hdl.handle.net/20.500.14352/103525
Access Level:acceso abierto
Palabra clave:544.163
Metal oxide
Crystallinity
Optical absorption
Electrical conductivity
Optica (Química)
Química física (Química)
Electrónica (Física)
2304.03 Polímeros Compuestos
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oai_identifier_str oai:docta.ucm.es:20.500.14352/103525
network_acronym_str ES
network_name_str España
repository_id_str
spelling Polycrystalline WO3−x Thin Films Obtained by Reactive DC Sputtering at Room TemperatureGuillén Arqueros, Cecilia544.163Metal oxideCrystallinityOptical absorptionElectrical conductivityOptica (Química)Química física (Química)Electrónica (Física)2304.03 Polímeros CompuestosTungsten oxide thin films have applications in various energy-related devices owing to their versatile semiconductor properties, which depend on the oxygen content and crystalline state. The concentration of electrons increases with intrinsic defects such as oxygen vacancies, which create new absorption bands that give rise to colored films. Disorders in the crystal structure produce additional changes in the electrical and optical characteristics. Here, WO3−x thin films are prepared on unheated glass substrates by reactive DC sputtering from a pure metal target, using the discharge power and the oxygen-to-argon pressure ratio as control parameters. A transition from amorphous to polycrystalline state is obtained by increasing the sputtering power and adjusting the oxygen content. The surface roughness is higher and the bandgap energy is lower for polycrystalline layers than for amorphous ones. Moreover, the electrical conductivity and sub-bandgap absorption increase as the oxygen content decreases.MDPIShapovalov, ViktorUniversidad Complutense de Madrid20232023-01-0120232023-01-01journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/103525reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Attribution 4.0 Internationalhttps://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/1035252026-06-02T12:44:21Z
dc.title.none.fl_str_mv Polycrystalline WO3−x Thin Films Obtained by Reactive DC Sputtering at Room Temperature
title Polycrystalline WO3−x Thin Films Obtained by Reactive DC Sputtering at Room Temperature
spellingShingle Polycrystalline WO3−x Thin Films Obtained by Reactive DC Sputtering at Room Temperature
Guillén Arqueros, Cecilia
544.163
Metal oxide
Crystallinity
Optical absorption
Electrical conductivity
Optica (Química)
Química física (Química)
Electrónica (Física)
2304.03 Polímeros Compuestos
title_short Polycrystalline WO3−x Thin Films Obtained by Reactive DC Sputtering at Room Temperature
title_full Polycrystalline WO3−x Thin Films Obtained by Reactive DC Sputtering at Room Temperature
title_fullStr Polycrystalline WO3−x Thin Films Obtained by Reactive DC Sputtering at Room Temperature
title_full_unstemmed Polycrystalline WO3−x Thin Films Obtained by Reactive DC Sputtering at Room Temperature
title_sort Polycrystalline WO3−x Thin Films Obtained by Reactive DC Sputtering at Room Temperature
dc.creator.none.fl_str_mv Guillén Arqueros, Cecilia
author Guillén Arqueros, Cecilia
author_facet Guillén Arqueros, Cecilia
author_role author
dc.contributor.none.fl_str_mv Shapovalov, Viktor
Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 544.163
Metal oxide
Crystallinity
Optical absorption
Electrical conductivity
Optica (Química)
Química física (Química)
Electrónica (Física)
2304.03 Polímeros Compuestos
topic 544.163
Metal oxide
Crystallinity
Optical absorption
Electrical conductivity
Optica (Química)
Química física (Química)
Electrónica (Física)
2304.03 Polímeros Compuestos
description Tungsten oxide thin films have applications in various energy-related devices owing to their versatile semiconductor properties, which depend on the oxygen content and crystalline state. The concentration of electrons increases with intrinsic defects such as oxygen vacancies, which create new absorption bands that give rise to colored films. Disorders in the crystal structure produce additional changes in the electrical and optical characteristics. Here, WO3−x thin films are prepared on unheated glass substrates by reactive DC sputtering from a pure metal target, using the discharge power and the oxygen-to-argon pressure ratio as control parameters. A transition from amorphous to polycrystalline state is obtained by increasing the sputtering power and adjusting the oxygen content. The surface roughness is higher and the bandgap energy is lower for polycrystalline layers than for amorphous ones. Moreover, the electrical conductivity and sub-bandgap absorption increase as the oxygen content decreases.
publishDate 2023
dc.date.none.fl_str_mv 2023
2023-01-01
2023
2023-01-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/103525
url https://hdl.handle.net/20.500.14352/103525
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution 4.0 International
https://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution 4.0 International
https://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv MDPI
publisher.none.fl_str_mv MDPI
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300719

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