Thermal rectification in silicon by a graded distribution of defects
We discuss about computer experiments based on nonequilibrium molecular dynamics simulations providing evidence that thermal rectification can be obtained in bulk Si by a non-uniform distribution of defects. We consider a graded population of both Ge substitutional defects and nanovoids, distributed...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2016 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:241010 |
| Acceso en línea: | https://ddd.uab.cat/record/241010 https://dx.doi.org/urn:doi:10.1063/1.4953142 |
| Access Level: | acceso abierto |
| Palabra clave: | Computer experiment Defect distribution Defect engineering Graded distributions Non-uniform distribution Nonequilibrium molecular dynamics simulation Rectification factors Substitutional defects |
| Sumario: | We discuss about computer experiments based on nonequilibrium molecular dynamics simulations providing evidence that thermal rectification can be obtained in bulk Si by a non-uniform distribution of defects. We consider a graded population of both Ge substitutional defects and nanovoids, distributed along the direction of an applied thermal bias, and predict a rectification factor comparable to what is observed in other low-dimensional Si-based nanostructures. By considering several defect distribution profiles, thermal bias conditions, and sample sizes, the present results suggest that a possible way for tuning the thermal rectification is by defect engineering. |
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